Recent advances in semiconductor optical amplifiers

C. Tombling; W.C. Michie; I. Andonovic; A.E. Kelly

doi:10.1109/LEOS.2003.1253089

Recent advances in semiconductor optical amplifiers

C. Tombling, W.C. Michie, I. Andonovic, A.E. Kelly

Electronic And Electrical Engineering

Research output: Contribution to conference › Paper

1 Citation (Scopus)

Abstract

The recent developments of SOAs are: reduction of polarisation independence which requires the introduction of a tensile strain in the bulk active region. The modal profile at the facet of the device determined the coupling to optical fibre and also the effective facet reflectivity when angled facets are used. The output power available from SOAs is a key parameter. SOAs have the potential to offer low cost, small form factor optical amplification. SOAs has improved substantially and this, allied to the requirement for low cost amplification over the 1.3-1.6μm wavelength window due to the increasing interest in CWDM.

Original language	English
Pages	892-893
Number of pages	1
DOIs	https://doi.org/10.1109/LEOS.2003.1253089
Publication status	Published - Oct 2003
Event	16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003 - Tucson, United States Duration: 27 Oct 2003 → 28 Oct 2003

Conference

Conference	16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003
Country/Territory	United States
City	Tucson
Period	27/10/03 → 28/10/03

Keywords

capacitive sensors
tensile strain
tellurium
stimulated emission
semiconductor optical amplifiers
power generation
optical waveguides
optical fiber networks
noise figure
optical polarization

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10.1109/LEOS.2003.1253089

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@conference{af085480c60d40d081eda06deddf31d8,

title = "Recent advances in semiconductor optical amplifiers",

abstract = "The recent developments of SOAs are: reduction of polarisation independence which requires the introduction of a tensile strain in the bulk active region. The modal profile at the facet of the device determined the coupling to optical fibre and also the effective facet reflectivity when angled facets are used. The output power available from SOAs is a key parameter. SOAs have the potential to offer low cost, small form factor optical amplification. SOAs has improved substantially and this, allied to the requirement for low cost amplification over the 1.3-1.6μm wavelength window due to the increasing interest in CWDM. ",

keywords = "capacitive sensors, tensile strain , tellurium, stimulated emission , semiconductor optical amplifiers, power generation, optical waveguides, optical fiber networks , noise figure, optical polarization",

author = "C. Tombling and W.C. Michie and I. Andonovic and A.E. Kelly",

year = "2003",

month = oct,

doi = "10.1109/LEOS.2003.1253089",

language = "English",

pages = "892--893",

note = "16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003 ; Conference date: 27-10-2003 Through 28-10-2003",

}

TY - CONF

T1 - Recent advances in semiconductor optical amplifiers

AU - Tombling, C.

AU - Michie, W.C.

AU - Andonovic, I.

AU - Kelly, A.E.

PY - 2003/10

Y1 - 2003/10

N2 - The recent developments of SOAs are: reduction of polarisation independence which requires the introduction of a tensile strain in the bulk active region. The modal profile at the facet of the device determined the coupling to optical fibre and also the effective facet reflectivity when angled facets are used. The output power available from SOAs is a key parameter. SOAs have the potential to offer low cost, small form factor optical amplification. SOAs has improved substantially and this, allied to the requirement for low cost amplification over the 1.3-1.6μm wavelength window due to the increasing interest in CWDM.

AB - The recent developments of SOAs are: reduction of polarisation independence which requires the introduction of a tensile strain in the bulk active region. The modal profile at the facet of the device determined the coupling to optical fibre and also the effective facet reflectivity when angled facets are used. The output power available from SOAs is a key parameter. SOAs have the potential to offer low cost, small form factor optical amplification. SOAs has improved substantially and this, allied to the requirement for low cost amplification over the 1.3-1.6μm wavelength window due to the increasing interest in CWDM.

KW - capacitive sensors

KW - tensile strain

KW - tellurium

KW - stimulated emission

KW - semiconductor optical amplifiers

KW - power generation

KW - optical waveguides

KW - optical fiber networks

KW - noise figure

KW - optical polarization

U2 - 10.1109/LEOS.2003.1253089

DO - 10.1109/LEOS.2003.1253089

M3 - Paper

SP - 892

EP - 893

T2 - 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003

Y2 - 27 October 2003 through 28 October 2003

ER -

Recent advances in semiconductor optical amplifiers

Abstract

Conference

Keywords

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