Recent advances in semiconductor optical amplifiers

C. Tombling, W.C. Michie, I. Andonovic, A.E. Kelly

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The recent developments of SOAs are: reduction of polarisation independence which requires the introduction of a tensile strain in the bulk active region. The modal profile at the facet of the device determined the coupling to optical fibre and also the effective facet reflectivity when angled facets are used. The output power available from SOAs is a key parameter. SOAs have the potential to offer low cost, small form factor optical amplification. SOAs has improved substantially and this, allied to the requirement for low cost amplification over the 1.3-1.6μm wavelength window due to the increasing interest in CWDM.

Original languageEnglish
Pages892-893
Number of pages1
DOIs
Publication statusPublished - Oct 2003
Event16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003 - Tucson, United States
Duration: 27 Oct 200328 Oct 2003

Conference

Conference16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003
CountryUnited States
CityTucson
Period27/10/0328/10/03

Keywords

  • capacitive sensors
  • tensile strain
  • tellurium
  • stimulated emission
  • semiconductor optical amplifiers
  • power generation
  • optical waveguides
  • optical fiber networks
  • noise figure
  • optical polarization

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  • Cite this

    Tombling, C., Michie, W. C., Andonovic, I., & Kelly, A. E. (2003). Recent advances in semiconductor optical amplifiers. 892-893. Paper presented at 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003, Tucson, United States. https://doi.org/10.1109/LEOS.2003.1253089