ReaxFF molecular dynamics simulation study of nanoelectrode lithography oxidation process on silicon (100) surface

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Abstract

The nanoelectrode lithography has been strengthened in recent years as one of the most promising methods due to its high reproducibility, low cost and ability to manufacture nano-sized structures. In this work, the mechanism and the parametric influence in nanoelectrode lithography have been studied qualitatively in atomic scale using ReaxFF MD simulation. This approach was originally developed by van Duin and co-workers to investigate hydrocarbon chemistry. We have investigated the water adsorption and dissociation processes on Si (100) surface as well as the characteristics (structure, chemical composition, morphology, charge distribution, etc.) of the oxide growth. The simulation results show two forms of adsorption of water molecules: molecular adsorption and dissociative adsorption. After breaking the adsorbed hydroxyls, the oxygen atoms insert into the substrate to form the Si−O−Si bonds so as to make the surface oxidized. The influence of the electric field intensity (1.5 – 7 V/nm) and the relative humidity (20 – 90%) on the oxidation process have also been discussed. Nevertheless, the results obtained from the simulations have been compared qualitatively with the experimental results and they show in good agreements. Variable charge molecular dynamics allowed us to characterize the nanoelectrode lithography process from an atomistic point of view.
LanguageEnglish
Article number143679
JournalApplied Surface Science
Volume496
Early online date14 Aug 2019
DOIs
Publication statusE-pub ahead of print - 14 Aug 2019

Fingerprint

Silicon
Lithography
Molecular dynamics
lithography
molecular dynamics
Adsorption
Oxidation
oxidation
adsorption
Computer simulation
silicon
simulation
Water
Charge distribution
inserts
Hydrocarbons
Hydroxyl Radical
Oxides
charge distribution
water

Keywords

  • ReaxFF MD
  • oxidation
  • chemical composition
  • electric field intensity
  • humidity

Cite this

@article{e43674abb7064c6c99a35c41b198eabf,
title = "ReaxFF molecular dynamics simulation study of nanoelectrode lithography oxidation process on silicon (100) surface",
abstract = "The nanoelectrode lithography has been strengthened in recent years as one of the most promising methods due to its high reproducibility, low cost and ability to manufacture nano-sized structures. In this work, the mechanism and the parametric influence in nanoelectrode lithography have been studied qualitatively in atomic scale using ReaxFF MD simulation. This approach was originally developed by van Duin and co-workers to investigate hydrocarbon chemistry. We have investigated the water adsorption and dissociation processes on Si (100) surface as well as the characteristics (structure, chemical composition, morphology, charge distribution, etc.) of the oxide growth. The simulation results show two forms of adsorption of water molecules: molecular adsorption and dissociative adsorption. After breaking the adsorbed hydroxyls, the oxygen atoms insert into the substrate to form the Si−O−Si bonds so as to make the surface oxidized. The influence of the electric field intensity (1.5 – 7 V/nm) and the relative humidity (20 – 90{\%}) on the oxidation process have also been discussed. Nevertheless, the results obtained from the simulations have been compared qualitatively with the experimental results and they show in good agreements. Variable charge molecular dynamics allowed us to characterize the nanoelectrode lithography process from an atomistic point of view.",
keywords = "ReaxFF MD, oxidation, chemical composition, electric field intensity, humidity",
author = "Hasan, {Rashed Md. Murad} and Olivier Politano and Xichun Luo",
year = "2019",
month = "8",
day = "14",
doi = "10.1016/j.apsusc.2019.143679",
language = "English",
volume = "496",
journal = "Applied Surface Science",
issn = "0169-4332",

}

TY - JOUR

T1 - ReaxFF molecular dynamics simulation study of nanoelectrode lithography oxidation process on silicon (100) surface

AU - Hasan, Rashed Md. Murad

AU - Politano, Olivier

AU - Luo, Xichun

PY - 2019/8/14

Y1 - 2019/8/14

N2 - The nanoelectrode lithography has been strengthened in recent years as one of the most promising methods due to its high reproducibility, low cost and ability to manufacture nano-sized structures. In this work, the mechanism and the parametric influence in nanoelectrode lithography have been studied qualitatively in atomic scale using ReaxFF MD simulation. This approach was originally developed by van Duin and co-workers to investigate hydrocarbon chemistry. We have investigated the water adsorption and dissociation processes on Si (100) surface as well as the characteristics (structure, chemical composition, morphology, charge distribution, etc.) of the oxide growth. The simulation results show two forms of adsorption of water molecules: molecular adsorption and dissociative adsorption. After breaking the adsorbed hydroxyls, the oxygen atoms insert into the substrate to form the Si−O−Si bonds so as to make the surface oxidized. The influence of the electric field intensity (1.5 – 7 V/nm) and the relative humidity (20 – 90%) on the oxidation process have also been discussed. Nevertheless, the results obtained from the simulations have been compared qualitatively with the experimental results and they show in good agreements. Variable charge molecular dynamics allowed us to characterize the nanoelectrode lithography process from an atomistic point of view.

AB - The nanoelectrode lithography has been strengthened in recent years as one of the most promising methods due to its high reproducibility, low cost and ability to manufacture nano-sized structures. In this work, the mechanism and the parametric influence in nanoelectrode lithography have been studied qualitatively in atomic scale using ReaxFF MD simulation. This approach was originally developed by van Duin and co-workers to investigate hydrocarbon chemistry. We have investigated the water adsorption and dissociation processes on Si (100) surface as well as the characteristics (structure, chemical composition, morphology, charge distribution, etc.) of the oxide growth. The simulation results show two forms of adsorption of water molecules: molecular adsorption and dissociative adsorption. After breaking the adsorbed hydroxyls, the oxygen atoms insert into the substrate to form the Si−O−Si bonds so as to make the surface oxidized. The influence of the electric field intensity (1.5 – 7 V/nm) and the relative humidity (20 – 90%) on the oxidation process have also been discussed. Nevertheless, the results obtained from the simulations have been compared qualitatively with the experimental results and they show in good agreements. Variable charge molecular dynamics allowed us to characterize the nanoelectrode lithography process from an atomistic point of view.

KW - ReaxFF MD

KW - oxidation

KW - chemical composition

KW - electric field intensity

KW - humidity

U2 - 10.1016/j.apsusc.2019.143679

DO - 10.1016/j.apsusc.2019.143679

M3 - Article

VL - 496

JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 143679

ER -