Realization of a semiconductor-based cavity soliton laser

Y. Tanguy, T. Ackemann, W.J. Firth, R. Jäger

Research output: Contribution to journalArticle

142 Citations (Scopus)

Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.
LanguageEnglish
Article number013907
Number of pages4
JournalPhysical Review Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 11 Jan 2008

Fingerprint

solitary waves
cavities
lasers
optical control
injection

Keywords

  • laser
  • cavity laser
  • soliton cavity laser
  • semiconductor
  • solitonic emission states
  • microlasers
  • laser beam
  • optics
  • physics

Cite this

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title = "Realization of a semiconductor-based cavity soliton laser",
abstract = "The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.",
keywords = "laser, cavity laser, soliton cavity laser, semiconductor, solitonic emission states, microlasers, laser beam, optics, physics",
author = "Y. Tanguy and T. Ackemann and W.J. Firth and R. J{\"a}ger",
year = "2008",
month = "1",
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doi = "10.1103/PhysRevLett.100.013907",
language = "English",
volume = "100",
journal = "Physical Review Letters",
issn = "0031-9007",
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Realization of a semiconductor-based cavity soliton laser. / Tanguy, Y.; Ackemann, T.; Firth, W.J.; Jäger, R.

In: Physical Review Letters, Vol. 100, No. 1, 013907, 11.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Realization of a semiconductor-based cavity soliton laser

AU - Tanguy, Y.

AU - Ackemann, T.

AU - Firth, W.J.

AU - Jäger, R.

PY - 2008/1/11

Y1 - 2008/1/11

N2 - The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.

AB - The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.

KW - laser

KW - cavity laser

KW - soliton cavity laser

KW - semiconductor

KW - solitonic emission states

KW - microlasers

KW - laser beam

KW - optics

KW - physics

UR - http://arxiv.org/PS_cache/arxiv/pdf/0709/0709.2575v1.pdf

U2 - 10.1103/PhysRevLett.100.013907

DO - 10.1103/PhysRevLett.100.013907

M3 - Article

VL - 100

JO - Physical Review Letters

T2 - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 1

M1 - 013907

ER -