Realization of a semiconductor-based cavity soliton laser

Y. Tanguy, T. Ackemann, W.J. Firth, R. Jäger

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Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase insensitive and hence expected to be robust for all-optical processing applications. The mobility of these structures is also demonstrated.
Original languageEnglish
Article number013907
Number of pages4
JournalPhysical Review Letters
Volume100
Issue number1
DOIs
Publication statusPublished - 11 Jan 2008

Keywords

  • laser
  • cavity laser
  • soliton cavity laser
  • semiconductor
  • solitonic emission states
  • microlasers
  • laser beam
  • optics
  • physics

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