RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals

Michael V. Yakushev; Vladimir A. Volkov; Niyazi N. Mursakulov; Chimnaz E. Sabzaliyeva; Robert W. Martin

doi:10.1116/1.4961882

RBS-channeling study of radiation damage in Ar⁺ implanted CuInSe2 crystals

Michael V. Yakushev, Vladimir A. Volkov, Niyazi N. Mursakulov, Chimnaz E. Sabzaliyeva, Robert W. Martin

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

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Abstract

Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar + -bombarded CuInSe 2 single crystal using Rutherford backscattering/channeling analysis. Ar + ions of 30 keV were implanted with doses in the range from 10 12 to 3 × 10 16 cm -2 at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stacking faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.

Original language	English
Article number	051203
Number of pages	6
Journal	Journal of Vacuum Science and Technology A
Volume	34
Issue number	5
DOIs	https://doi.org/10.1116/1.4961882
Publication status	Published - 1 Sept 2016

Keywords

radiation damage
CuInSe2
solar cells
Rutherford backscattering
RBS
Chalcopyrite

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10.1116/1.4961882

Yakushev-etal-JVSTA-2016-RBS-channeling-study-of-radiation-damage-in-Ar+implanted-CuInSe2-crystalsFinal published version, 644 KB

Cite this

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title = "RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals",

abstract = "Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar + -bombarded CuInSe 2 single crystal using Rutherford backscattering/channeling analysis. Ar + ions of 30 keV were implanted with doses in the range from 10 12 to 3 × 10 16 cm -2 at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stacking faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.",

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T1 - RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals

AU - Yakushev, Michael V.

AU - Volkov, Vladimir A.

AU - Mursakulov, Niyazi N.

AU - Sabzaliyeva, Chimnaz E.

AU - Martin, Robert W.

PY - 2016/9/1

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AB - Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar + -bombarded CuInSe 2 single crystal using Rutherford backscattering/channeling analysis. Ar + ions of 30 keV were implanted with doses in the range from 10 12 to 3 × 10 16 cm -2 at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stacking faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.

KW - radiation damage

KW - CuInSe2

KW - solar cells

KW - Rutherford backscattering

KW - RBS

KW - Chalcopyrite

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