RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling

N.P. Barradas, E. Alves, S. Pereira, I.M. Watson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

There is strong current interest in Förster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.
Original languageEnglish
Pages (from-to)1402-1406
Number of pages4
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume288
Issue number8
DOIs
Publication statusPublished - Apr 2008

Keywords

  • rutherford backscattering
  • multilayers
  • GaN
  • InGaN
  • NDF

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