RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling

N.P. Barradas, E. Alves, S. Pereira, I.M. Watson

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3 Citations (Scopus)

Abstract

There is strong current interest in Förster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.
LanguageEnglish
Pages1402-1406
Number of pages4
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume288
Issue number8
DOIs
Publication statusPublished - Apr 2008

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hybrid structures
Semiconductor quantum wells
quantum wells
Energy transfer
energy transfer
caps
dipoles
polymers
interactions
grazing
Polymers
Semiconductor quantum dots
Experiments
quantum dots
requirements
high resolution

Keywords

  • rutherford backscattering
  • multilayers
  • GaN
  • InGaN
  • NDF

Cite this

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title = "RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling",
abstract = "There is strong current interest in F{\"o}rster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.",
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author = "N.P. Barradas and E. Alves and S. Pereira and I.M. Watson",
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TY - JOUR

T1 - RBS analysis of InaGaN/GaN quantum wells for hybrid structures with efficient Forster coupling

AU - Barradas, N.P.

AU - Alves, E.

AU - Pereira, S.

AU - Watson, I.M.

PY - 2008/4

Y1 - 2008/4

N2 - There is strong current interest in Förster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.

AB - There is strong current interest in Förster resonant energy transfer (FRET) from a semiconductor quantum well (QW) to an overlayer of another luminescent material. The FRET process becomes efficient when the two materials are placed at interaction distance of a few nanometres. The additional requirement of large spectral overlap between the energy donor and acceptor can be satisfied by combinations of InGaN/GaN QWs (as donors) and overlayers of either light-emitting polymers or nanocrystalline semiconductor quantum dots (as acceptors), both of which can be tailored to have high absorption in the QW emission region. Here we study a set of custom grown InGaN/GaN single QW samples, in which the GaN cap layer thickness was varied to modulate the FRET rate in hybrid structures. We used high-resolution grazing angle RBS experiments to determine the GaN cap layer thickness, varied from 2 to 12 nm, which controlled the interaction distance between the QW and the coupled luminescent medium in hybrid structures. The very careful experiments and data analysis are discussed in detail, including a consideration of the errors in the final results obtained. An example of the use of the measured thickness values to confirm the dominance of sheet-to-sheet dipole-dipole interactions in QW-polymer hybrid structures is discussed.

KW - rutherford backscattering

KW - multilayers

KW - GaN

KW - InGaN

KW - NDF

UR - http://dx.doi.org/10.1016/j.nimb.2007.12.052

U2 - 10.1016/j.nimb.2007.12.052

DO - 10.1016/j.nimb.2007.12.052

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JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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SN - 0168-583X

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