Rare earth doping of III-nitride alloys by ion implantation

K. Lorenz, E. Alves, I.S. Roqan, R.W. Martin, C. Trager-Cowan, K.P. O'Donnell, I.M. Watson

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.
Original languageEnglish
Pages (from-to)34-37
Number of pages3
JournalPhysica Status Solidi A
Volume205
Issue number1
DOIs
Publication statusPublished - 30 Jan 2008

Fingerprint

Nitrides
Ion implantation
Rare earths
nitrides
ion implantation
Luminescence
rare earth elements
Doping (additives)
luminescence
damage
implantation
Annealing
annealing
Amorphization
Energy gap
recovery
broadband
Recovery
Temperature
temperature

Keywords

  • rare earth luminescence
  • wide band gap
  • AlGaN
  • AlInN
  • GaN

Cite this

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title = "Rare earth doping of III-nitride alloys by ion implantation",
abstract = "The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.",
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Rare earth doping of III-nitride alloys by ion implantation. / Lorenz, K.; Alves, E.; Roqan, I.S.; Martin, R.W.; Trager-Cowan, C.; O'Donnell, K.P.; Watson, I.M.

In: Physica Status Solidi A, Vol. 205, No. 1, 30.01.2008, p. 34-37.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Rare earth doping of III-nitride alloys by ion implantation

AU - Lorenz, K.

AU - Alves, E.

AU - Roqan, I.S.

AU - Martin, R.W.

AU - Trager-Cowan, C.

AU - O'Donnell, K.P.

AU - Watson, I.M.

PY - 2008/1/30

Y1 - 2008/1/30

N2 - The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.

AB - The implantation damage and rare earth (RE) luminescence in the wide band gap ternaries AlGaN and AlInN were studied and compared to GaN. For both ternaries lower damage levels were observed and in contrast to GaN, no surface amorphisation occurs during the implantation. Damage recovery of RE implanted GaN was studied for post implant annealing at temperatures between 800 °C and 1300 °C. The blue and IR Tm related luminescence intensity is seen to increase strongly with the annealing temperature. The two Tm lines observed at 478 nm and 465 nm are assigned to the 1G4 3H6 and the 1D23F4 transition, respectively. For GaN the line at 465 nm is fully quenched at RT while it becomes the dominant line for the ternaries. The blue luminescence intensity in the ternaries is significantly stronger than in GaN. Furthermore, AlInN shows a very high ratio of blue/IR luminescence.

KW - rare earth luminescence

KW - wide band gap

KW - AlGaN

KW - AlInN

KW - GaN

U2 - 10.1002/pssa.200776714

DO - 10.1002/pssa.200776714

M3 - Article

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SP - 34

EP - 37

JO - Physica Status Solidi A

JF - Physica Status Solidi A

SN - 1862-6300

IS - 1

ER -