Rare earth doped III-nitrides for optoelectronics

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.

LanguageEnglish
Pages91-103
Number of pages13
JournalEuropean Physical Journal: Applied Physics
Volume36
Issue number2
DOIs
Publication statusPublished - Nov 2006

Fingerprint

Nitrides
Optoelectronic devices
Rare earths
nitrides
rare earth elements
Optical transitions
optical transition
Ion implantation
Vacancies
ion implantation
Luminescence
Nanostructures
parity
Nitrogen
Display devices
Doping (additives)
Spectroscopy
Annealing
luminescence
nitrogen

Keywords

  • EU implanted GaN
  • spectra
  • optical properties
  • electrical activity
  • fine structure
  • ER
  • erbium
  • photoluminescence
  • excitation

Cite this

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abstract = "Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.",
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Rare earth doped III-nitrides for optoelectronics. / O'Donnell, K.P.; Hourahine, B.

In: European Physical Journal: Applied Physics , Vol. 36, No. 2, 11.2006, p. 91-103.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Rare earth doped III-nitrides for optoelectronics

AU - O'Donnell, K.P.

AU - Hourahine, B.

PY - 2006/11

Y1 - 2006/11

N2 - Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.

AB - Rare-earth (RE) doped III-nitrides, prepared by in-situ doping during growth or by ion implantation and annealing, are promising materials for visible light emitting displays. In addition, they are plantation extremely challenging theoretically, on account of the complexity of the sharp inter-4f optical transitions, which are allowed only through the mixing by non-centrosymmetric crystal. elds of the inner-4f orbitals with higher-lying states of opposite parity. We review recent experimental and theoretical work on Er-, Eu- and Tm-doped III-nitride compounds and alloys which has been carried out with a view to establishing the lattice location of RE in these materials and the probable nanostructure of the centres which are responsible for their luminescence. The isolated site REIII is found to be both optically and electrically inactive, but in association with neighbouring intrinsic defects (most probably nitrogen vacancies) REIII can generate a small family of similar optically active sites. Such a family is held to be responsible for the site multiplicity that is a common feature of the spectroscopy of RE-doped III-nitrides.

KW - EU implanted GaN

KW - spectra

KW - optical properties

KW - electrical activity

KW - fine structure

KW - ER

KW - erbium

KW - photoluminescence

KW - excitation

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DO - 10.1051/epjap:2006122

M3 - Article

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JO - European Physical Journal: Applied Physics

T2 - European Physical Journal: Applied Physics

JF - European Physical Journal: Applied Physics

SN - 1286-0042

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