Raman-scattering study of the InGaN alloy over the whole composition range

S. Hernandez, R. Cusco, D. Pastor, L. Artus, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, E. Calleja

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We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.
Original languageEnglish
Pages (from-to)013511-03515
Number of pages5
JournalJournal of Applied Physics
Publication statusPublished - 2005


  • indium compounds
  • phonon dispersion relations
  • phonon-phonon interactions,
  • spectral line shift
  • energy gap
  • Raman spectra
  • semiconductor epitaxial layers
  • gallium compounds, III-V semiconductors, wide band gap semiconductors


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