Raman-scattering study of the InGaN alloy over the whole composition range

S. Hernandez; R. Cusco; D. Pastor; L. Artus; K.P. O'Donnell; R.W. Martin; I.M. Watson; Y. Nanishi; E. Calleja

doi:10.1063/1.1940139

Raman-scattering study of the InGaN alloy over the whole composition range

S. Hernandez, R. Cusco, D. Pastor, L. Artus, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, E. Calleja

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Abstract

We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.

Original language	English
Pages (from-to)	013511-03515
Number of pages	5
Journal	Journal of Applied Physics
Volume	98
DOIs	https://doi.org/10.1063/1.1940139
Publication status	Published - 2005

Keywords

indium compounds
phonon dispersion relations
phonon-phonon interactions,
spectral line shift
energy gap
Raman spectra
semiconductor epitaxial layers
gallium compounds, III-V semiconductors, wide band gap semiconductors

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title = "Raman-scattering study of the InGaN alloy over the whole composition range",

abstract = "We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions. ",

keywords = "indium compounds, phonon dispersion relations, phonon-phonon interactions, , spectral line shift, energy gap, Raman spectra, semiconductor epitaxial layers, gallium compounds, III-V semiconductors, wide band gap semiconductors ",

author = "S. Hernandez and R. Cusco and D. Pastor and L. Artus and K.P. O'Donnell and R.W. Martin and I.M. Watson and Y. Nanishi and E. Calleja",

year = "2005",

doi = "10.1063/1.1940139",

language = "English",

volume = "98",

pages = "013511--03515",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Raman-scattering study of the InGaN alloy over the whole composition range

AU - Hernandez, S.

AU - Cusco, R.

AU - Pastor, D.

AU - Artus, L.

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Nanishi, Y.

AU - Calleja, E.

PY - 2005

Y1 - 2005

N2 - We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.

AB - We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.

KW - indium compounds

KW - phonon dispersion relations

KW - phonon-phonon interactions,

KW - spectral line shift

KW - energy gap

KW - Raman spectra

KW - semiconductor epitaxial layers

KW - gallium compounds, III-V semiconductors, wide band gap semiconductors

UR - http://jap.aip.org/resource/1/japiau/v98/i1/p013511_s1

U2 - 10.1063/1.1940139

DO - 10.1063/1.1940139

M3 - Article

SN - 0021-8979

VL - 98

SP - 13511

EP - 13515

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Raman-scattering study of the InGaN alloy over the whole composition range

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Keywords

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