Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

R. Cusco; D. Pastor; S. Hernandez; L. Artus; O. Martinez; J. Jimenez; R.W. Martin; K.P. O'Donnell; I.M. Watson

doi:10.1088/0268-1242/23/10/105002

Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

R. Cusco, D. Pastor, S. Hernandez, L. Artus, O. Martinez, J. Jimenez, R.W. Martin, K.P. O'Donnell, I.M. Watson

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present a Raman scattering and cathodoluminescence study of a set of InxAl1-xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A(1)(LO) and InN-like E-2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E-2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1-xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.

Original language	English
Pages (from-to)	105002-1-105002-4
Journal	Semiconductor Science and Technology
Volume	23
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/23/10/105002
Publication status	Published - Oct 2008

Keywords

alloys
films
Raman scattering
cathodoluminescence

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10.1088/0268-1242/23/10/105002

http://dx.doi.org/10.1088/0268-1242/23/10/105002

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@article{650b18bc3691473e844fec2dd899dbcf,

title = "Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers",

abstract = "We present a Raman scattering and cathodoluminescence study of a set of InxAl1-xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A(1)(LO) and InN-like E-2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E-2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1-xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.",

keywords = "alloys, films, Raman scattering, cathodoluminescence",

author = "R. Cusco and D. Pastor and S. Hernandez and L. Artus and O. Martinez and J. Jimenez and R.W. Martin and K.P. O'Donnell and I.M. Watson",

note = "Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.",

year = "2008",

month = oct,

doi = "10.1088/0268-1242/23/10/105002",

language = "English",

volume = "23",

pages = "105002--1--105002--4",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

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Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers. / Cusco, R.; Pastor, D.; Hernandez, S.; Artus, L.; Martinez, O.; Jimenez, J.; Martin, R.W.; O'Donnell, K.P.; Watson, I.M.

In: Semiconductor Science and Technology, Vol. 23, No. 10, 10.2008, p. 105002-1-105002-4.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

AU - Cusco, R.

AU - Pastor, D.

AU - Hernandez, S.

AU - Artus, L.

AU - Martinez, O.

AU - Jimenez, J.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Watson, I.M.

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2008/10

Y1 - 2008/10

N2 - We present a Raman scattering and cathodoluminescence study of a set of InxAl1-xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A(1)(LO) and InN-like E-2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E-2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1-xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.

AB - We present a Raman scattering and cathodoluminescence study of a set of InxAl1-xN/GaN epilayers with InN fractions around the lattice-matched composition. We observed the A(1)(LO) and InN-like E-2 modes of the alloy, whose frequencies are in good agreement with theoretical predictions, but we were unable to detect the AlN-like E-2 mode. The InN-like E2 mode did not exhibit noticeable frequency shifts in the studied samples. This is explained by the presence of residual strain in the pseudomorphic InxAl1-xN films. A luminescence peak that shifts to lower energies with an increasing InN fraction was observed at energies above the band edge of the GaN substrate. The cathodoluminescence peak energy is lower than expected, indicating a large band-gap bowing in these alloy layers.

KW - alloys

KW - films

KW - Raman scattering

KW - cathodoluminescence

UR - http://dx.doi.org/10.1088/0268-1242/23/10/105002

U2 - 10.1088/0268-1242/23/10/105002

DO - 10.1088/0268-1242/23/10/105002

M3 - Article

VL - 23

SP - 105002-1-105002-4

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

ER -