Radio-frequency capacitive gate-based sensing

Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W.A. Robinson, Alessandro Rossi, John J.L. Morton, M. Fernando Gonzalez-Zalba

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20 Citations (Scopus)


Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3μe/Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.

Original languageEnglish
Article number014018
Number of pages9
JournalPhysical Review Applied
Issue number1
Publication statusPublished - 19 Jul 2018


  • quantum computation
  • quantum information architectures & platforms
  • quantum information with solid state qubits
  • radio frequency techniques

Cite this

Ahmed, I., Haigh, J. A., Schaal, S., Barraud, S., Zhu, Y., Lee, C., Amado, M., Robinson, J. W. A., Rossi, A., Morton, J. J. L., & Gonzalez-Zalba, M. F. (2018). Radio-frequency capacitive gate-based sensing. Physical Review Applied, 10(1), [014018].