Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

M V Yakushev; J Márquez-Prieto; I Forbes; P R Edwards; V D Zhivulko; A V Mudryi; J Krustok; R W Martin

doi:10.1088/0022-3727/48/47/475109

Radiative recombination in Cu₂ZnSnSe₄ thin films with Cu deficiency and Zn excess

M V Yakushev, J Márquez-Prieto, I Forbes, P R Edwards, V D Zhivulko, A V Mudryi, J Krustok, R W Martin

Physics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

113 Downloads (Pure)

Abstract

Thin films of Cu₂ZnSnSe₄ (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

Original language	English
Article number	475109
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	47
DOIs	https://doi.org/10.1088/0022-3727/48/47/475109
Publication status	Published - 2 Nov 2015

Keywords

Cu2ZnSnSe4
solar cells
photoluminescence

Access to Document

10.1088/0022-3727/48/47/475109

Yakushev-etal-JOPD-2015-Radiative-recombination-in-Cu2ZnSnSe4-thin-films-with-Cu-deficiencyAccepted author manuscript, 632 KB

Cite this

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title = "Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess",

abstract = "Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1\%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K. ",

keywords = "Cu2ZnSnSe4, solar cells, photoluminescence",

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doi = "10.1088/0022-3727/48/47/475109",

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journal = "Journal of Physics D: Applied Physics",

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TY - JOUR

T1 - Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

AU - Yakushev, M V

AU - Márquez-Prieto, J

AU - Forbes, I

AU - Edwards, P R

AU - Zhivulko, V D

AU - Mudryi, A V

AU - Krustok, J

AU - Martin, R W

PY - 2015/11/2

Y1 - 2015/11/2

N2 - Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

AB - Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

KW - Cu2ZnSnSe4

KW - solar cells

KW - photoluminescence

UR - http://iopscience.iop.org/article/10.1088/0022-3727/48/47/475109/meta;jsessionid=4F9625FC1AE5CE2917412B7422F9D013.c3.iopscience.cld.iop.org

U2 - 10.1088/0022-3727/48/47/475109

DO - 10.1088/0022-3727/48/47/475109

M3 - Article

SN - 0022-3727

VL - 48

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 47

M1 - 475109

ER -

Radiative recombination in Cu₂ZnSnSe₄ thin films with Cu deficiency and Zn excess

Abstract

Keywords

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Other files and links

Fingerprint

CAMECA SX100

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Cite this

Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Equipment

CAMECA SX100

Research output

Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers

Cite this

Radiative recombination in Cu₂ZnSnSe₄ thin films with Cu deficiency and Zn excess