Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

M V Yakushev, J Márquez-Prieto, I Forbes, P R Edwards, V D Zhivulko, A V Mudryi, J Krustok, R W Martin

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)
101 Downloads (Pure)


Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.
Original languageEnglish
Article number475109
Number of pages7
JournalJournal of Physics D: Applied Physics
Issue number47
Publication statusPublished - 2 Nov 2015


  • Cu2ZnSnSe4
  • solar cells
  • photoluminescence


Dive into the research topics of 'Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess'. Together they form a unique fingerprint.

Cite this