Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess

M V Yakushev, J Márquez-Prieto, I Forbes, P R Edwards, V D Zhivulko, A V Mudryi, J Krustok, R W Martin

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Abstract

Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.
Original languageEnglish
Article number475109
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume48
Issue number47
DOIs
Publication statusPublished - 2 Nov 2015

Fingerprint

radiative recombination
Glass
Thin films
glass
thin films
Photoluminescence
photoluminescence
Zinc
Copper
Solar cells
zinc
solar cells
copper
Substrates
excitation
Temperature
temperature

Keywords

  • Cu2ZnSnSe4
  • solar cells
  • photoluminescence

Cite this

Yakushev, M V ; Márquez-Prieto, J ; Forbes, I ; Edwards, P R ; Zhivulko, V D ; Mudryi, A V ; Krustok, J ; Martin, R W. / Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess. In: Journal of Physics D: Applied Physics. 2015 ; Vol. 48, No. 47.
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Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess. / Yakushev, M V; Márquez-Prieto, J; Forbes, I; Edwards, P R; Zhivulko, V D; Mudryi, A V; Krustok, J; Martin, R W.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 47, 475109, 02.11.2015.

Research output: Contribution to journalArticle

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AU - Yakushev, M V

AU - Márquez-Prieto, J

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AB - Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K.

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