Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

Y.N. Qiu, H.D. Sun, J.M. Rorison, S. Calvez, M.D. Dawson, A.C. Bryce

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is investigated theoretically. The diffusion of gallium and indium atoms in the intermixed sample is assumed and their compositional profiles are modelled using Fick's law. The band-anti-crossing model is used to calculate the band structure of the GaInNAs quantum well, which is appropriate for this non-randomly-alloyed material system. The calculated results show good agreement with the observed photoluminescence excitation for both non-intermixed and intermixed samples, which confirms this model. It is found that the strain gradient, the variation of material band gap and the degeneracy between heavy and light holes are the main factors determining the quantized energy levels of the intermixed quantum well. With the increase of diffusion length, the material gain and differential gain decrease due to the increase of the conduction band effective mass and the rapid decrease of the dipole moments. These characteristics of quantum-well intermixing effects will be useful in the design of integrated photonic devices based on this material. (Abstract from WOK)
LanguageEnglish
JournalSemiconductor Science and Technology
Volume23
Issue number9
DOIs
Publication statusPublished - Sep 2008

Fingerprint

Quantum well lasers
quantum well lasers
Semiconductor quantum wells
quantum wells
Fick's laws
diffusion length
Photonic devices
Gallium
Indium
gallium
Dipole moment
indium
conduction bands
dipole moments
Conduction bands
energy levels
Band structure
Electron energy levels
photonics
Photoluminescence

Keywords

  • CENTER-DOT-P
  • 1.3 MU-M
  • BAND-STRUCTURE
  • ROOM-TEMPERATURE
  • OPTICAL GAIN
  • ALLOYS
  • SEMICONDUCTORS
  • 1.3-MU-M
  • INTERDIFFUSION
  • SUPPRESSION

Cite this

Qiu, Y.N. ; Sun, H.D. ; Rorison, J.M. ; Calvez, S. ; Dawson, M.D. ; Bryce, A.C. / Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 9.
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Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study. / Qiu, Y.N.; Sun, H.D.; Rorison, J.M.; Calvez, S.; Dawson, M.D.; Bryce, A.C.

In: Semiconductor Science and Technology, Vol. 23, No. 9, 09.2008.

Research output: Contribution to journalArticle

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T1 - Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

AU - Qiu, Y.N.

AU - Sun, H.D.

AU - Rorison, J.M.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Bryce, A.C.

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N2 - The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is investigated theoretically. The diffusion of gallium and indium atoms in the intermixed sample is assumed and their compositional profiles are modelled using Fick's law. The band-anti-crossing model is used to calculate the band structure of the GaInNAs quantum well, which is appropriate for this non-randomly-alloyed material system. The calculated results show good agreement with the observed photoluminescence excitation for both non-intermixed and intermixed samples, which confirms this model. It is found that the strain gradient, the variation of material band gap and the degeneracy between heavy and light holes are the main factors determining the quantized energy levels of the intermixed quantum well. With the increase of diffusion length, the material gain and differential gain decrease due to the increase of the conduction band effective mass and the rapid decrease of the dipole moments. These characteristics of quantum-well intermixing effects will be useful in the design of integrated photonic devices based on this material. (Abstract from WOK)

AB - The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is investigated theoretically. The diffusion of gallium and indium atoms in the intermixed sample is assumed and their compositional profiles are modelled using Fick's law. The band-anti-crossing model is used to calculate the band structure of the GaInNAs quantum well, which is appropriate for this non-randomly-alloyed material system. The calculated results show good agreement with the observed photoluminescence excitation for both non-intermixed and intermixed samples, which confirms this model. It is found that the strain gradient, the variation of material band gap and the degeneracy between heavy and light holes are the main factors determining the quantized energy levels of the intermixed quantum well. With the increase of diffusion length, the material gain and differential gain decrease due to the increase of the conduction band effective mass and the rapid decrease of the dipole moments. These characteristics of quantum-well intermixing effects will be useful in the design of integrated photonic devices based on this material. (Abstract from WOK)

KW - CENTER-DOT-P

KW - 1.3 MU-M

KW - BAND-STRUCTURE

KW - ROOM-TEMPERATURE

KW - OPTICAL GAIN

KW - ALLOYS

KW - SEMICONDUCTORS

KW - 1.3-MU-M

KW - INTERDIFFUSION

KW - SUPPRESSION

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U2 - 10.1088/0268-1242/23/9/095010

DO - 10.1088/0268-1242/23/9/095010

M3 - Article

VL - 23

JO - Semiconductor Science and Technology

T2 - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

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ER -