Quantum well intermixing in GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, S. Calvez, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, P. Gilet, L. Grenouillet, A. Million, K.B. Nam, J.Y. Lin, H.X. Jiang

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Abstract

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.
Original languageEnglish
Pages (from-to)7581-7585
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
Publication statusPublished - Dec 2003

Keywords

  • gallium compounds
  • gallium arsenide
  • III-V semiconductors
  • semiconductor quantum wells
  • rapid thermal annealing
  • photoluminescence
  • spectral line shift
  • sputtering
  • chemical interdiffusion

Cite this

Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., Gilet, P., Grenouillet, L., Million, A., Nam, K. B., Lin, J. Y., & Jiang, H. X. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. https://doi.org/10.1063/1.1627950