Quantum well intermixing in GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, S. Calvez, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, P. Gilet, L. Grenouillet, A. Million, K.B. Nam, J.Y. Lin, H.X. Jiang

Research output: Contribution to journalArticle

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Abstract

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.
LanguageEnglish
Pages7581-7585
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
Publication statusPublished - Dec 2003

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quantum wells
caps
sputtering
disorders
saturation
photoluminescence
annealing

Keywords

  • gallium compounds
  • gallium arsenide
  • III-V semiconductors
  • semiconductor quantum wells
  • rapid thermal annealing
  • photoluminescence
  • spectral line shift
  • sputtering
  • chemical interdiffusion

Cite this

Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., ... Jiang, H. X. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585. https://doi.org/10.1063/1.1627950
Sun, H.D. ; Macaluso, R. ; Calvez, S. ; Dawson, M.D. ; Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; Gilet, P. ; Grenouillet, L. ; Million, A. ; Nam, K.B. ; Lin, J.Y. ; Jiang, H.X. / Quantum well intermixing in GaInNAs/GaAs structures. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 12. pp. 7581-7585.
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Sun, HD, Macaluso, R, Calvez, S, Dawson, MD, Robert, F, Bryce, AC, Marsh, JH, Gilet, P, Grenouillet, L, Million, A, Nam, KB, Lin, JY & Jiang, HX 2003, 'Quantum well intermixing in GaInNAs/GaAs structures' Journal of Applied Physics, vol. 94, no. 12, pp. 7581-7585. https://doi.org/10.1063/1.1627950

Quantum well intermixing in GaInNAs/GaAs structures. / Sun, H.D.; Macaluso, R.; Calvez, S.; Dawson, M.D.; Robert, F.; Bryce, A.C.; Marsh, J.H.; Gilet, P.; Grenouillet, L.; Million, A.; Nam, K.B.; Lin, J.Y.; Jiang, H.X.

In: Journal of Applied Physics, Vol. 94, No. 12, 12.2003, p. 7581-7585.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantum well intermixing in GaInNAs/GaAs structures

AU - Sun, H.D.

AU - Macaluso, R.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Robert, F.

AU - Bryce, A.C.

AU - Marsh, J.H.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

AU - Nam, K.B.

AU - Lin, J.Y.

AU - Jiang, H.X.

PY - 2003/12

Y1 - 2003/12

N2 - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.

AB - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.

KW - gallium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - rapid thermal annealing

KW - photoluminescence

KW - spectral line shift

KW - sputtering

KW - chemical interdiffusion

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EP - 7585

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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ER -

Sun HD, Macaluso R, Calvez S, Dawson MD, Robert F, Bryce AC et al. Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics. 2003 Dec;94(12):7581-7585. https://doi.org/10.1063/1.1627950