Quantum well intermixing in 1.3µm GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, S. Calvez, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, H. Riechert, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to conferencePaper

Abstract

This paper is about quantum well intermixing in 1.3µm GaInNAs/GaAs structures.
Original languageEnglish
Publication statusUnpublished - 2003

Keywords

  • quantum well intermixing
  • gallium nitride
  • GaInNAs
  • GaAs
  • gallium compounds
  • semiconductors

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