Quantum well engineering in InGaN/GaN core-shell nanorod structures

C. G. Bryce, E. D. Le Boulbar, P.-M. Coulon, P. R. Edwards, I. Gîrgel, D. W. E. Allsopp, P. A. Shields, R. W. Martin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.
LanguageEnglish
Article number42LT01
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume50
Issue number42
DOIs
Publication statusPublished - 27 Sep 2017

Fingerprint

Nanorods
Semiconductor quantum wells
nanorods
quantum wells
Growth temperature
engineering
flat surfaces
Cathodoluminescence
Light emission
Light emitting diodes
cathodoluminescence
light emission
light emitting diodes
temperature

Keywords

  • cathodoluminescence
  • quantum wells

Cite this

Bryce, C. G. ; Le Boulbar, E. D. ; Coulon, P.-M. ; Edwards, P. R. ; Gîrgel, I. ; Allsopp, D. W. E. ; Shields, P. A. ; Martin, R. W. / Quantum well engineering in InGaN/GaN core-shell nanorod structures. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 42.
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Quantum well engineering in InGaN/GaN core-shell nanorod structures. / Bryce, C. G.; Le Boulbar, E. D.; Coulon, P.-M.; Edwards, P. R.; Gîrgel, I.; Allsopp, D. W. E.; Shields, P. A.; Martin, R. W.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 42, 42LT01, 27.09.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantum well engineering in InGaN/GaN core-shell nanorod structures

AU - Bryce, C. G.

AU - Le Boulbar, E. D.

AU - Coulon, P.-M.

AU - Edwards, P. R.

AU - Gîrgel, I.

AU - Allsopp, D. W. E.

AU - Shields, P. A.

AU - Martin, R. W.

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AB - We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

KW - cathodoluminescence

KW - quantum wells

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