Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

Christina Bueckers, Eckhard Kuehn, Christoph Schlichenmaier, Sebastian Imhof, Angela Thraenhardt, Joerg Hader, Jerome V. Moloney, Oleg Rubel, Wei Zhang, Thorsten Ackemann, Stephan W. Koch

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Abstract

This article gives an,overview of the microscopic theory,theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theory experiment comparisons are shown and it is analyze how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical-external-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions.

Original languageEnglish
Pages (from-to)789-808
Number of pages20
JournalPhysica Status Solidi B
Volume247
Issue number4
DOIs
Publication statusPublished - Apr 2010

Keywords

  • circular TEM00 beams
  • carrier capture time
  • well lasers
  • MU-M
  • spontaneous emission
  • epitaxial-growth
  • diode-lasers
  • disk lasers
  • high powers
  • design

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    Bueckers, C., Kuehn, E., Schlichenmaier, C., Imhof, S., Thraenhardt, A., Hader, J., Moloney, J. V., Rubel, O., Zhang, W., Ackemann, T., & Koch, S. W. (2010). Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems. Physica Status Solidi B, 247(4), 789-808. https://doi.org/10.1002/pssb.200945432