Quantum electron beam probe of sidewall dry-etch damage

M Rahman; JG Williamson; K Mathieson; G Dick; MJ Brown; S Duffy; CDW Wilkinson

doi:10.1016/S0167-9317(00)00336-1

Quantum electron beam probe of sidewall dry-etch damage

M Rahman, JG Williamson, K Mathieson, G Dick, MJ Brown, S Duffy, CDW Wilkinson

Institute Of Photonics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.

Original language	English
Pages (from-to)	371-374
Number of pages	4
Journal	Microelectronic Engineering
Volume	53
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(00)00336-1
Publication status	Published - 1 Jun 2000

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Keywords

electron beam
dry-etch damage
quantum electron beam

Cite this

Rahman, M., Williamson, JG., Mathieson, K., Dick, G., Brown, MJ., Duffy, S., & Wilkinson, CDW. (2000). Quantum electron beam probe of sidewall dry-etch damage. Microelectronic Engineering, 53(1-4), 371-374. https://doi.org/10.1016/S0167-9317(00)00336-1

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author = "M Rahman and JG Williamson and K Mathieson and G Dick and MJ Brown and S Duffy and CDW Wilkinson",

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AU - Mathieson, K

AU - Dick, G

AU - Brown, MJ

AU - Duffy, S

AU - Wilkinson, CDW

N1 - 25th International Conference on Micro- and Nano-Engineering, ROME, ITALY, SEP 21-23, 1999

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N2 - Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.

AB - Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.

KW - electron beam

KW - dry-etch damage

KW - quantum electron beam

U2 - 10.1016/S0167-9317(00)00336-1

DO - 10.1016/S0167-9317(00)00336-1

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

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Access to Document

10.1016/S0167-9317(00)00336-1