Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays

P.R. Edwards, R.W. Martin, I.M. Watson, C. Liu, R.A. Taylor, J.H. Rice, J.H. Na, J.W. Robinson, J.D. Smith

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Abstract

InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 meV
Original languageEnglish
Pages (from-to)4281-4283
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
Publication statusPublished - 8 Nov 2004

Keywords

  • quantum dot emission
  • InGaN/GaN micropyramid arrays
  • nanoscience

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