Quantitive simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

C. Liu, I.M. Watson

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Multi-wavelength in situ reflectometry at normal incidence has been applied to monitoring metal organic vapour phase epitaxy of GaN films on sapphire (0 0 0 1) substrates. A new quantitative analysis model has been developed to incorporate time-dependent light scattering by a rough surface, and a time-dependent vertical growth rate during growth on a rough surface, into the virtual interface model that has previously been applied to multilayer structures with optically smooth surfaces and interfaces. It is shown that the vertical growth rate increases as the surface roughness decreases in the early stage of high-temperature GaN growth, reaching a limiting value when the surface becomes optically smooth. The time dependence of growth rate is correlated with microscopic crystal growth mechanisms on the rough surface, which involve mass transport on the facets and/or mass exchange between the growing surface and gas-phase ambient. Our optical modelling is supported by direct morphological investigations of films from growths terminated at various stages, using atomic force microscopy. High-temperature optical constants of GaN layers extracted from the simulations are well matched to literature values.
LanguageEnglish
Pages629-635
Number of pages6
JournalSemiconductor Science and Technology
Volume22
DOIs
Publication statusPublished - 2007

Fingerprint

Vapor phase epitaxy
Aluminum Oxide
Sapphire
vapor phase epitaxy
sapphire
Metals
reflectance
metals
simulation
Optical constants
Growth temperature
Crystallization
Crystal growth
Light scattering
laminates
quantitative analysis
time dependence
crystal growth
flat surfaces
Atomic force microscopy

Keywords

  • photonics
  • physics
  • optics
  • optical modelling
  • waves

Cite this

@article{6459f96ebeb2426fb8ff0899604745a0,
title = "Quantitive simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire",
abstract = "Multi-wavelength in situ reflectometry at normal incidence has been applied to monitoring metal organic vapour phase epitaxy of GaN films on sapphire (0 0 0 1) substrates. A new quantitative analysis model has been developed to incorporate time-dependent light scattering by a rough surface, and a time-dependent vertical growth rate during growth on a rough surface, into the virtual interface model that has previously been applied to multilayer structures with optically smooth surfaces and interfaces. It is shown that the vertical growth rate increases as the surface roughness decreases in the early stage of high-temperature GaN growth, reaching a limiting value when the surface becomes optically smooth. The time dependence of growth rate is correlated with microscopic crystal growth mechanisms on the rough surface, which involve mass transport on the facets and/or mass exchange between the growing surface and gas-phase ambient. Our optical modelling is supported by direct morphological investigations of films from growths terminated at various stages, using atomic force microscopy. High-temperature optical constants of GaN layers extracted from the simulations are well matched to literature values.",
keywords = "photonics, physics, optics, optical modelling, waves",
author = "C. Liu and I.M. Watson",
year = "2007",
doi = "10.1088/0268-1242/22/6/008",
language = "English",
volume = "22",
pages = "629--635",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",

}

TY - JOUR

T1 - Quantitive simulation of in situ reflectance data from metal organic vapour phase epitaxy of GaN on sapphire

AU - Liu, C.

AU - Watson, I.M.

PY - 2007

Y1 - 2007

N2 - Multi-wavelength in situ reflectometry at normal incidence has been applied to monitoring metal organic vapour phase epitaxy of GaN films on sapphire (0 0 0 1) substrates. A new quantitative analysis model has been developed to incorporate time-dependent light scattering by a rough surface, and a time-dependent vertical growth rate during growth on a rough surface, into the virtual interface model that has previously been applied to multilayer structures with optically smooth surfaces and interfaces. It is shown that the vertical growth rate increases as the surface roughness decreases in the early stage of high-temperature GaN growth, reaching a limiting value when the surface becomes optically smooth. The time dependence of growth rate is correlated with microscopic crystal growth mechanisms on the rough surface, which involve mass transport on the facets and/or mass exchange between the growing surface and gas-phase ambient. Our optical modelling is supported by direct morphological investigations of films from growths terminated at various stages, using atomic force microscopy. High-temperature optical constants of GaN layers extracted from the simulations are well matched to literature values.

AB - Multi-wavelength in situ reflectometry at normal incidence has been applied to monitoring metal organic vapour phase epitaxy of GaN films on sapphire (0 0 0 1) substrates. A new quantitative analysis model has been developed to incorporate time-dependent light scattering by a rough surface, and a time-dependent vertical growth rate during growth on a rough surface, into the virtual interface model that has previously been applied to multilayer structures with optically smooth surfaces and interfaces. It is shown that the vertical growth rate increases as the surface roughness decreases in the early stage of high-temperature GaN growth, reaching a limiting value when the surface becomes optically smooth. The time dependence of growth rate is correlated with microscopic crystal growth mechanisms on the rough surface, which involve mass transport on the facets and/or mass exchange between the growing surface and gas-phase ambient. Our optical modelling is supported by direct morphological investigations of films from growths terminated at various stages, using atomic force microscopy. High-temperature optical constants of GaN layers extracted from the simulations are well matched to literature values.

KW - photonics

KW - physics

KW - optics

KW - optical modelling

KW - waves

UR - http://dx.doi.org/10.10.1088/0268-1242/22/6/008

U2 - 10.1088/0268-1242/22/6/008

DO - 10.1088/0268-1242/22/6/008

M3 - Article

VL - 22

SP - 629

EP - 635

JO - Semiconductor Science and Technology

T2 - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

ER -