Pure single photon emission from an InGaN/GaN quantum dot

M. J. Holmes, T. Zhu, F. C.-P. Massabuau, J. Jarman, R. A. Oliver, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

Abstract

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.
Original languageEnglish
Article number061106
Number of pages6
JournalAPL Materials
Volume9
Issue number6
DOIs
Publication statusPublished - 14 Jun 2021

Keywords

  • pure
  • single-photon emission
  • InGaN/GaN quantum dot

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