Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors

Neville McNeill, Bosen Jin, Xibo Yuan

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

4 Citations (Scopus)

Abstract

A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.
Original languageEnglish
Title of host publication8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Place of PublicationStevenage
DOIs
Publication statusPublished - 19 Apr 2016
Externally publishedYes
Event8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 - Hilton Hotel, Glasgow, United Kingdom
Duration: 19 Apr 201621 Apr 2016

Conference

Conference8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016
CountryUnited Kingdom
CityGlasgow
Period19/04/1621/04/16

Keywords

  • wide band gap semiconductors
  • bipolar stransistors
  • driver circuits
  • power convertors

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