Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors

Neville McNeill; Bosen Jin; Xibo Yuan

doi:10.1049/cp.2016.0240

Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors

Neville McNeill, Bosen Jin, Xibo Yuan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

4 Citations (Scopus)

Abstract

A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.

Original language	English
Title of host publication	8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)
Place of Publication	Stevenage
DOIs	https://doi.org/10.1049/cp.2016.0240
Publication status	Published - 19 Apr 2016
Externally published	Yes
Event	8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 - Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016

Conference

Conference	8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016
Country	United Kingdom
City	Glasgow
Period	19/04/16 → 21/04/16

Keywords

wide band gap semiconductors
bipolar stransistors
driver circuits
power convertors

Access to Document

10.1049/cp.2016.0240

http://ieeexplore.ieee.org/document/7739428/

Fingerprint Dive into the research topics of 'Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors'. Together they form a unique fingerprint.

Cite this

@inproceedings{6a59d190da024a33974bd500d772c5c7,

title = "Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors",

abstract = "A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.",

keywords = "wide band gap semiconductors, bipolar stransistors, driver circuits, power convertors",

author = "Neville McNeill and Bosen Jin and Xibo Yuan",

year = "2016",

month = apr,

day = "19",

doi = "10.1049/cp.2016.0240",

language = "English",

isbn = "978-1-78561-188-9",

booktitle = "8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)",

note = "8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 ; Conference date: 19-04-2016 Through 21-04-2016",

}

McNeill, N, Jin, B & Yuan, X 2016, Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors. in 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016). Stevenage, 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016, Glasgow, United Kingdom, 19/04/16. https://doi.org/10.1049/cp.2016.0240

TY - GEN

T1 - Proportional regenerative base driver circuit with negative off-state voltage for SiC bipolar junction transistors

AU - McNeill, Neville

AU - Jin, Bosen

AU - Yuan, Xibo

PY - 2016/4/19

Y1 - 2016/4/19

N2 - A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.

AB - A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.

KW - wide band gap semiconductors

KW - bipolar stransistors

KW - driver circuits

KW - power convertors

UR - http://ieeexplore.ieee.org/document/7739428/

U2 - 10.1049/cp.2016.0240

DO - 10.1049/cp.2016.0240

M3 - Conference contribution book

SN - 978-1-78561-188-9

BT - 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016)

CY - Stevenage

T2 - 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016

Y2 - 19 April 2016 through 21 April 2016

ER -