Abstract
A proportional base driver circuit for SiC bipolar junction transistors is presented. A current transformer feeds a proportion of the transistor's collector current into its base. The influence of the current transformer's magnetising current on its output current is addressed, as are minimum reset time restrictions. The circuit applies a negative off-state baseemitter voltage. Combining this and a regenerative proportional base drive current does not incur undue complexity or cost. The circuit is evaluated in a buck converter supplied from a 600V rail, switching at 50kHz and at a duty factor of 85%, and outputting 2.52kW.
Original language | English |
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Title of host publication | 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) |
Place of Publication | Stevenage |
DOIs | |
Publication status | Published - 19 Apr 2016 |
Externally published | Yes |
Event | 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 - Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016 |
Conference
Conference | 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 19/04/16 → 21/04/16 |
Keywords
- wide band gap semiconductors
- bipolar stransistors
- driver circuits
- power convertors