Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

F. C.-P. Massabuau; J. W. Roberts; D. Nicol; P. R. Edwards; M. McLelland; G. L. Dallas; D. A. Hunter; E. A. Nicolson; J. C. Jarman; A. Kovács; R. W. Martin; R. A. Oliver; P. R. Chalker

doi:10.1117/12.2588729

Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors

F. C.-P. Massabuau, J. W. Roberts, D. Nicol, P. R. Edwards, M. McLelland, G. L. Dallas, D. A. Hunter, E. A. Nicolson, J. C. Jarman, A. Kovács, R. W. Martin, R. A. Oliver, P. R. Chalker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

6 Citations (Scopus)

56 Downloads (Pure)

Abstract

Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga₂O₃ films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga₂O₃ and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga₂O₃ films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.

Original language	English
Title of host publication	Proceedings Volume 11687, Oxide-based Materials and Devices
Editors	David J. Rogers, David C. Look, Ferechteh H. Teherani
Place of Publication	Bellingham, WA, United States
ISBN (Electronic)	9781510642096
DOIs	https://doi.org/10.1117/12.2588729
Publication status	Published - 5 Mar 2021
Event	Society of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII - Online Duration: 6 Mar 2021 → 12 Mar 2021 Conference number: 12 https://spie.org/PWO/conferencedetails/oxide-based-materials-and-devices?SSO=1

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11687
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Society of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII
Abbreviated title	SPIE OPTO 2021
Period	6/03/21 → 12/03/21
Internet address	https://spie.org/PWO/conferencedetails/oxide-based-materials-and-devices?SSO=1

Keywords

gallium oxide
corundum phase
atomic layer deposition
solar-blind detection

Access to Document

10.1117/12.2588729

Massabuau-etal-SPIE-2021-Progress-in-atomic-layer-deposited-a-Ga2O3-materialsAccepted author manuscript, 2.97 MB

Cite this

Massabuau, F. C.-P., Roberts, J. W., Nicol, D., Edwards, P. R., McLelland, M., Dallas, G. L., Hunter, D. A., Nicolson, E. A., Jarman, J. C., Kovács, A., Martin, R. W., Oliver, R. A., & Chalker, P. R. (2021). Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors. In D. J. Rogers, D. C. Look, & F. H. Teherani (Eds.), Proceedings Volume 11687, Oxide-based Materials and Devices Article 116870Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687).. https://doi.org/10.1117/12.2588729

Massabuau, F. C.-P. ; Roberts, J. W. ; Nicol, D. et al. / Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors. Proceedings Volume 11687, Oxide-based Materials and Devices. editor / David J. Rogers ; David C. Look ; Ferechteh H. Teherani. Bellingham, WA, United States, 2021. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{d983ed04be8c494cb25197727f841a54,

title = "Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors",

abstract = "Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.",

keywords = "gallium oxide, corundum phase, atomic layer deposition, solar-blind detection",

author = "Massabuau, {F. C.-P.} and Roberts, {J. W.} and D. Nicol and Edwards, {P. R.} and M. McLelland and Dallas, {G. L.} and Hunter, {D. A.} and Nicolson, {E. A.} and Jarman, {J. C.} and A. Kov{\'a}cs and Martin, {R. W.} and Oliver, {R. A.} and Chalker, {P. R.}",

note = "{\textcopyright} 2021 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.; Society of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII, SPIE OPTO 2021 ; Conference date: 06-03-2021 Through 12-03-2021",

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doi = "10.1117/12.2588729",

language = "English",

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editor = "Rogers, {David J.} and Look, {David C.} and Teherani, {Ferechteh H.}",

booktitle = "Proceedings Volume 11687, Oxide-based Materials and Devices",

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Massabuau, FC-P, Roberts, JW, Nicol, D , Edwards, PR, McLelland, M, Dallas, GL, Hunter, DA, Nicolson, EA, Jarman, JC, Kovács, A, Martin, RW, Oliver, RA & Chalker, PR 2021, Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors. in DJ Rogers, DC Look & FH Teherani (eds), Proceedings Volume 11687, Oxide-based Materials and Devices., 116870Q, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11687, Bellingham, WA, United States, Society of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII, 6/03/21. https://doi.org/10.1117/12.2588729

Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors. / Massabuau, F. C.-P.; Roberts, J. W.; Nicol, D. et al.
Proceedings Volume 11687, Oxide-based Materials and Devices. ed. / David J. Rogers; David C. Look; Ferechteh H. Teherani. Bellingham, WA, United States, 2021. 116870Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11687).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

AU - Massabuau, F. C.-P.

AU - Roberts, J. W.

AU - Nicol, D.

AU - Edwards, P. R.

AU - McLelland, M.

AU - Dallas, G. L.

AU - Hunter, D. A.

AU - Nicolson, E. A.

AU - Jarman, J. C.

AU - Kovács, A.

AU - Martin, R. W.

AU - Oliver, R. A.

AU - Chalker, P. R.

N1 - Conference code: 12

PY - 2021/3/5

Y1 - 2021/3/5

N2 - Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.

AB - Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.

KW - gallium oxide

KW - corundum phase

KW - atomic layer deposition

KW - solar-blind detection

UR - https://spie.org/PWO/conferencedetails/oxide-based-materials-and-devices?SSO=1

U2 - 10.1117/12.2588729

DO - 10.1117/12.2588729

M3 - Conference contribution book

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Proceedings Volume 11687, Oxide-based Materials and Devices

A2 - Rogers, David J.

A2 - Look, David C.

A2 - Teherani, Ferechteh H.

CY - Bellingham, WA, United States

T2 - Society of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII

Y2 - 6 March 2021 through 12 March 2021

ER -

Massabuau FCP, Roberts JW, Nicol D , Edwards PR, McLelland M, Dallas GL et al. Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors. In Rogers DJ, Look DC, Teherani FH, editors, Proceedings Volume 11687, Oxide-based Materials and Devices. Bellingham, WA, United States. 2021. 116870Q. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2588729

Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600

Photoluminescence setup JA2.02A - 224 nm laser (Photon System HeAg 70-224SL)

EPSRC Capital Core Equipment Award 2020

Data for: "Progress in atomic layer deposited a-Ga2O3 materials and solar-blind detectors"

EPSRC Capital Core Equipment Award 2020

Progress in atomic layer deposited α-Ga2O3 material and solar-blind detectors

Cite this

Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600

Photoluminescence setup JA2.02A - 224 nm laser (Photon System HeAg 70-224SL)

EPSRC Capital Core Equipment Award 2020

Datasets

Data for: "Progress in atomic layer deposited a-Ga2O3 materials and solar-blind detectors"

Prizes

EPSRC Capital Core Equipment Award 2020

Activities

Progress in atomic layer deposited α-Ga2O3 material and solar-blind detectors

Cite this

Progress in atomic layer deposited α-Ga₂O₃ materials and solar-blind detectors