Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

F. C.-P. Massabuau, J. W. Roberts, D. Nicol, P. R. Edwards, M. McLelland, G. L. Dallas, D. A. Hunter, E. A. Nicolson, J. C. Jarman, A. Kovács, R. W. Martin, R. A. Oliver, P. R. Chalker

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

2 Downloads (Pure)

Abstract

Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.
Original languageEnglish
Title of host publicationProceedings Volume 11687, Oxide-based Materials and Devices
EditorsDavid J. Rogers, David C. Look, Ferechteh H. Teherani
Place of PublicationBellingham, WA, United States
DOIs
Publication statusPublished - 5 Mar 2021
EventSociety of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII - Online
Duration: 6 Mar 202112 Mar 2021
Conference number: 12
https://spie.org/PWO/conferencedetails/oxide-based-materials-and-devices?SSO=1

Conference

ConferenceSociety of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII
Abbreviated titleSPIE OPTO 2021
Period6/03/2112/03/21
Internet address

Keywords

  • gallium oxide
  • corundum phase
  • atomic layer deposition
  • solar-blind detection

Cite this