Processing of the n-face of GaN: thinning, etching and morphological control

F. Rizzi, K. Bejtka, E. Gu, M.D. Dawson, F. Semond, I.M. Watson, R.W. Martin

Research output: Contribution to conferencePaper

Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

Conference

ConferenceInternational Workshop on Nitride Semiconductors
CityKyoto, Japan
Period22/10/0627/10/06

Fingerprint

Nitrides
Etching
Semiconductor materials
Processing

Keywords

  • n-face of GaN
  • morphological control
  • nitride semiconductors

Cite this

Rizzi, F., Bejtka, K., Gu, E., Dawson, M. D., Semond, F., Watson, I. M., & Martin, R. W. (2006). Processing of the n-face of GaN: thinning, etching and morphological control. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .
Rizzi, F. ; Bejtka, K. ; Gu, E. ; Dawson, M.D. ; Semond, F. ; Watson, I.M. ; Martin, R.W. / Processing of the n-face of GaN: thinning, etching and morphological control. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .
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title = "Processing of the n-face of GaN: thinning, etching and morphological control",
abstract = "This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.",
keywords = "n-face of GaN, morphological control, nitride semiconductors",
author = "F. Rizzi and K. Bejtka and E. Gu and M.D. Dawson and F. Semond and I.M. Watson and R.W. Martin",
year = "2006",
month = "10",
language = "English",
note = "International Workshop on Nitride Semiconductors ; Conference date: 22-10-2006 Through 27-10-2006",

}

Rizzi, F, Bejtka, K, Gu, E, Dawson, MD, Semond, F, Watson, IM & Martin, RW 2006, 'Processing of the n-face of GaN: thinning, etching and morphological control' Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, 22/10/06 - 27/10/06, .

Processing of the n-face of GaN: thinning, etching and morphological control. / Rizzi, F.; Bejtka, K.; Gu, E.; Dawson, M.D.; Semond, F.; Watson, I.M.; Martin, R.W.

2006. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Processing of the n-face of GaN: thinning, etching and morphological control

AU - Rizzi, F.

AU - Bejtka, K.

AU - Gu, E.

AU - Dawson, M.D.

AU - Semond, F.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2006/10

Y1 - 2006/10

N2 - This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

AB - This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

KW - n-face of GaN

KW - morphological control

KW - nitride semiconductors

UR - http://cat.inist.fr/?aModele=afficheN&cpsidt=18848708

M3 - Paper

ER -

Rizzi F, Bejtka K, Gu E, Dawson MD, Semond F, Watson IM et al. Processing of the n-face of GaN: thinning, etching and morphological control. 2006. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .