Processing of the n-face of GaN: thinning, etching and morphological control

F. Rizzi; K. Bejtka; E. Gu; M.D. Dawson; F. Semond; I.M. Watson; R.W. Martin

Processing of the n-face of GaN: thinning, etching and morphological control

F. Rizzi, K. Bejtka, E. Gu, M.D. Dawson, F. Semond, I.M. Watson, R.W. Martin

Research output: Contribution to conference › Paper

Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

Original language	English
Publication status	Unpublished - Oct 2006
Event	International Workshop on Nitride Semiconductors - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006

Conference

Conference	International Workshop on Nitride Semiconductors
City	Kyoto, Japan
Period	22/10/06 → 27/10/06

Keywords

n-face of GaN
morphological control
nitride semiconductors

Access to Document

http://cat.inist.fr/?aModele=afficheN&cpsidt=18848708

Cite this

@conference{d4face2dcab14e00a970df576115159d,

title = "Processing of the n-face of GaN: thinning, etching and morphological control",

abstract = "This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.",

keywords = "n-face of GaN, morphological control, nitride semiconductors",

author = "F. Rizzi and K. Bejtka and E. Gu and M.D. Dawson and F. Semond and I.M. Watson and R.W. Martin",

year = "2006",

month = oct,

language = "English",

note = "International Workshop on Nitride Semiconductors ; Conference date: 22-10-2006 Through 27-10-2006",

}

TY - CONF

T1 - Processing of the n-face of GaN: thinning, etching and morphological control

AU - Rizzi, F.

AU - Bejtka, K.

AU - Gu, E.

AU - Dawson, M.D.

AU - Semond, F.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2006/10

Y1 - 2006/10

N2 - This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

AB - This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.

KW - n-face of GaN

KW - morphological control

KW - nitride semiconductors

UR - http://cat.inist.fr/?aModele=afficheN&cpsidt=18848708

M3 - Paper

T2 - International Workshop on Nitride Semiconductors

Y2 - 22 October 2006 through 27 October 2006

ER -