Processing of the n-face of GaN: thinning, etching and morphological control

F. Rizzi, K. Bejtka, E. Gu, M.D. Dawson, F. Semond, I.M. Watson, R.W. Martin

Research output: Contribution to conference › Paper

Abstract

This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.
Original languageEnglish
Publication statusUnpublished - Oct 2006
EventInternational Workshop on Nitride Semiconductors - Kyoto, Japan
Duration: 22 Oct 2006 → 27 Oct 2006

Conference

ConferenceInternational Workshop on Nitride Semiconductors
CityKyoto, Japan
Period22/10/06 → 27/10/06

Keywords

  • n-face of GaN
  • morphological control
  • nitride semiconductors

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Cite this

Rizzi, F., Bejtka, K., Gu, E., Dawson, M. D., Semond, F., Watson, I. M., & Martin, R. W. (2006). Processing of the n-face of GaN: thinning, etching and morphological control. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .