This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.
|Publication status||Unpublished - Oct 2006|
|Event||International Workshop on Nitride Semiconductors - Kyoto, Japan|
Duration: 22 Oct 2006 → 27 Oct 2006
|Conference||International Workshop on Nitride Semiconductors|
|Period||22/10/06 → 27/10/06|
- n-face of GaN
- morphological control
- nitride semiconductors
Rizzi, F., Bejtka, K., Gu, E., Dawson, M. D., Semond, F., Watson, I. M., & Martin, R. W. (2006). Processing of the n-face of GaN: thinning, etching and morphological control. Paper presented at International Workshop on Nitride Semiconductors, Kyoto, Japan, .