Abstract
This paper is about the processing of the n-face of GaN. It covers thinning, etching and morphological control. It was presented at the 2006 International Workshop on Nitride Semiconductors.
Original language | English |
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Publication status | Unpublished - Oct 2006 |
Event | International Workshop on Nitride Semiconductors - Kyoto, Japan Duration: 22 Oct 2006 → 27 Oct 2006 |
Conference
Conference | International Workshop on Nitride Semiconductors |
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City | Kyoto, Japan |
Period | 22/10/06 → 27/10/06 |
Keywords
- n-face of GaN
- morphological control
- nitride semiconductors