Processing and characterisation of II-VI ZnCdMgSe thin film gain structures

Brynmor E. Jones, Peter J. Schlosser, Joel De Jesus, Thor A. Garcia, Maria C. Tamargo, Jennifer E. Hastie

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visible-light absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 μm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface and edge-emitting photoluminescence measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant quantum well emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in quantum well emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.
LanguageEnglish
Pages84-89
Number of pages6
JournalThin Solid Films
Volume590
Early online date11 Jul 2015
DOIs
Publication statusE-pub ahead of print - 11 Jul 2015

Fingerprint

Semiconductor quantum wells
quantum wells
Thin films
thin films
Processing
Diamond
Substrates
shift
Diamonds
diamonds
Optically pumped lasers
Optical pumping
Strain relaxation
Glass
Laser applications
selenides
Wet etching
glass
laser applications
Epitaxial layers

Keywords

  • film transfer
  • II-VI compounds
  • substrate removal
  • ZnCdMgSe

Cite this

Jones, B. E., Schlosser, P. J., De Jesus, J., Garcia, T. A., Tamargo, M. C., & Hastie, J. E. (2015). Processing and characterisation of II-VI ZnCdMgSe thin film gain structures. Thin Solid Films, 590, 84-89. https://doi.org/10.1016/j.tsf.2015.07.013
Jones, Brynmor E. ; Schlosser, Peter J. ; De Jesus, Joel ; Garcia, Thor A. ; Tamargo, Maria C. ; Hastie, Jennifer E. / Processing and characterisation of II-VI ZnCdMgSe thin film gain structures. In: Thin Solid Films. 2015 ; Vol. 590. pp. 84-89.
@article{8ddc56ac9ef043be94aa50b5d8730889,
title = "Processing and characterisation of II-VI ZnCdMgSe thin film gain structures",
abstract = "Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visible-light absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 μm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface and edge-emitting photoluminescence measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant quantum well emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in quantum well emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.",
keywords = "film transfer, II-VI compounds, substrate removal, ZnCdMgSe",
author = "Jones, {Brynmor E.} and Schlosser, {Peter J.} and {De Jesus}, Joel and Garcia, {Thor A.} and Tamargo, {Maria C.} and Hastie, {Jennifer E.}",
year = "2015",
month = "7",
day = "11",
doi = "10.1016/j.tsf.2015.07.013",
language = "English",
volume = "590",
pages = "84--89",
journal = "Thin Solid Films",
issn = "0040-6090",

}

Processing and characterisation of II-VI ZnCdMgSe thin film gain structures. / Jones, Brynmor E.; Schlosser, Peter J.; De Jesus, Joel; Garcia, Thor A.; Tamargo, Maria C.; Hastie, Jennifer E.

In: Thin Solid Films, Vol. 590, 11.07.2015, p. 84-89.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Processing and characterisation of II-VI ZnCdMgSe thin film gain structures

AU - Jones, Brynmor E.

AU - Schlosser, Peter J.

AU - De Jesus, Joel

AU - Garcia, Thor A.

AU - Tamargo, Maria C.

AU - Hastie, Jennifer E.

PY - 2015/7/11

Y1 - 2015/7/11

N2 - Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visible-light absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 μm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface and edge-emitting photoluminescence measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant quantum well emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in quantum well emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.

AB - Lattice-matched II-VI selenide quantum well (QW) structures grown on InP substrates can be designed for emission throughout the visible spectrum. InP has, however, strong visible-light absorption, so that a method for epitaxial lift-off and transfer to transparent substrates is desirable for vertically-integrated devices. We have designed and grown, via molecular beam epitaxy, ZnCdSe/ZnCdMgSe multi-QW gain regions for vertical emission, with the QWs positioned for resonant periodic gain. The release of the 2.7 μm-thick ZnCdSe/ZnCdMgSe multi-QW film is achieved via selective wet etching of the substrate and buffer layers leaving only the epitaxial layers, which are subsequently transferred to transparent substrates, including glass and thermally-conductive diamond. Post-transfer properties are investigated, with power and temperature-dependent surface and edge-emitting photoluminescence measurements demonstrating no observable strain relaxation effects or significant shift in comparison to unprocessed samples. The temperature dependant quantum well emission shift is found experimentally to be 0.13 nm/K. Samples capillary-bonded epitaxial-side to glass exhibited a 6 nm redshift under optical pumping of up to 35 mW at 405 nm, corresponding to a 46 K temperature increase in the pumped region; whereas those bonded to diamond exhibited no shift in quantum well emission, and thus efficient transfer of the heat from the pumped region. Atomic force microscopy analysis of the etched surface reveals a root-mean-square roughness of 3.6 nm. High quality optical interfaces are required to establish a good thermal and optical contact for high power optically pumped laser applications.

KW - film transfer

KW - II-VI compounds

KW - substrate removal

KW - ZnCdMgSe

U2 - 10.1016/j.tsf.2015.07.013

DO - 10.1016/j.tsf.2015.07.013

M3 - Article

VL - 590

SP - 84

EP - 89

JO - Thin Solid Films

T2 - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -