Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence

C. Trager-Cowan; P. G. Middleton; A. Mohammed; K. P. O'Donnell; W. Van der Stricht; I. Moerman; P. Demeester

Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence

C. Trager-Cowan^*, P. G. Middleton, A. Mohammed, K. P. O'Donnell, W. Van der Stricht, I. Moerman, P. Demeester

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.

Original language	English
Pages (from-to)	715-718
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	482
Publication status	Published - 1 Dec 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1 Dec 1997 → 4 Dec 1997

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@article{dac73425558b42168c98864bee088e5a,

title = "Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence",

abstract = "Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.",

author = "C. Trager-Cowan and Middleton, {P. G.} and A. Mohammed and O'Donnell, {K. P.} and {Van der Stricht}, W. and I. Moerman and P. Demeester",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "482",

pages = "715--718",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence

AU - Trager-Cowan, C.

AU - Middleton, P. G.

AU - Mohammed, A.

AU - O'Donnell, K. P.

AU - Van der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.

AB - Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.

UR - http://www.scopus.com/inward/record.url?scp=0031366797&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031366797

SN - 0272-9172

VL - 482

SP - 715

EP - 718

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence

Abstract

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