Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.
|Number of pages||4|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1 Dec 1997|
|Event||Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA|
Duration: 1 Dec 1997 → 4 Dec 1997