Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence

C. Trager-Cowan, P. G. Middleton, A. Mohammed, K. P. O'Donnell, W. Van der Stricht, I. Moerman, P. Demeester

Research output: Contribution to journalConference article

Abstract

Cathodoluminescence spectroscopy is used to depth profile the indium mole fraction of a 0.4 μm InGaN epilayer grown by metallorganic chemical vapour deposition, and to probe an underlying 1.0 μm GaN epilayer and the sapphire substrate beneath. Spectral information is obtained by using a variable energy electron beam as the excitation source. Calibration of beam penetration is achieved using Monte Carlo simulations of electron beam trajectories. The indium mole fraction is found to decrease from a mean value of 27% at the surface of the InGaN layer to 24% at its interface with the GaN layer.

Original languageEnglish
Pages (from-to)715-718
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - 1 Dec 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1 Dec 19974 Dec 1997

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