Probing nitride thin films in 3-dimensions using a variable energy electron beam

Carol Trager-Cowan, D. McColl, F. Sweeney, S. T.F. Grimson, J. F. Treguer, A. Mohammed, P. G. Middleton, S. K. Manson-Smith, K. P. O'Donnell, W. Van Der Stricht, L. Moerman, P. Demeester, M. F. Wu, A. Vantomme, D. Zubia, S. D. Hersee

Research output: Contribution to journalArticle

Abstract

In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (101̄0).

Original languageEnglish
Pages (from-to)405-411
Number of pages7
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberS1
DOIs
Publication statusPublished - 1 Dec 2000

Keywords

  • electron beam techniques
  • strain measurement
  • thin films

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