Probing nitride thin films in 3-dimensions using a variable energy electron beam

Carol Trager-Cowan, D. McColl, F. Sweeney, S. T.F. Grimson, J. F. Treguer, A. Mohammed, P. G. Middleton, S. K. Manson-Smith, K. P. O'Donnell, W. Van Der Stricht, L. Moerman, P. Demeester, M. F. Wu, A. Vantomme, D. Zubia, S. D. Hersee

Research output: Contribution to journalArticle

Abstract

In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (101̄0).

Original languageEnglish
Pages (from-to)405-411
Number of pages7
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberS1
DOIs
Publication statusPublished - 1 Dec 2000

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Aluminum Oxide
Epilayers
Sapphire
Nitrides
nitrides
Electron beams
sapphire
electron beams
Thin films
Silicon
Substrates
thin films
Defects
energy
defects
silicon
aluminum gallium nitride

Keywords

  • electron beam techniques
  • strain measurement
  • thin films

Cite this

Trager-Cowan, Carol ; McColl, D. ; Sweeney, F. ; Grimson, S. T.F. ; Treguer, J. F. ; Mohammed, A. ; Middleton, P. G. ; Manson-Smith, S. K. ; O'Donnell, K. P. ; Van Der Stricht, W. ; Moerman, L. ; Demeester, P. ; Wu, M. F. ; Vantomme, A. ; Zubia, D. ; Hersee, S. D. / Probing nitride thin films in 3-dimensions using a variable energy electron beam. In: MRS Internet Journal of Nitride Semiconductor Research. 2000 ; Vol. 5, No. S1. pp. 405-411.
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Trager-Cowan, C, McColl, D, Sweeney, F, Grimson, STF, Treguer, JF, Mohammed, A, Middleton, PG, Manson-Smith, SK, O'Donnell, KP, Van Der Stricht, W, Moerman, L, Demeester, P, Wu, MF, Vantomme, A, Zubia, D & Hersee, SD 2000, 'Probing nitride thin films in 3-dimensions using a variable energy electron beam', MRS Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1, pp. 405-411. https://doi.org/10.1557/S1092578300004579

Probing nitride thin films in 3-dimensions using a variable energy electron beam. / Trager-Cowan, Carol; McColl, D.; Sweeney, F.; Grimson, S. T.F.; Treguer, J. F.; Mohammed, A.; Middleton, P. G.; Manson-Smith, S. K.; O'Donnell, K. P.; Van Der Stricht, W.; Moerman, L.; Demeester, P.; Wu, M. F.; Vantomme, A.; Zubia, D.; Hersee, S. D.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, No. S1, 01.12.2000, p. 405-411.

Research output: Contribution to journalArticle

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T1 - Probing nitride thin films in 3-dimensions using a variable energy electron beam

AU - Trager-Cowan, Carol

AU - McColl, D.

AU - Sweeney, F.

AU - Grimson, S. T.F.

AU - Treguer, J. F.

AU - Mohammed, A.

AU - Middleton, P. G.

AU - Manson-Smith, S. K.

AU - O'Donnell, K. P.

AU - Van Der Stricht, W.

AU - Moerman, L.

AU - Demeester, P.

AU - Wu, M. F.

AU - Vantomme, A.

AU - Zubia, D.

AU - Hersee, S. D.

PY - 2000/12/1

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