In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (101̄0).
|Number of pages||7|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Publication status||Published - 1 Dec 2000|
- electron beam techniques
- strain measurement
- thin films