Probing light emission from quantum wells within a single nanorod

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.
LanguageEnglish
Article number365704
Number of pages7
JournalNanotechnology
Volume24
Issue number36
DOIs
Publication statusPublished - 19 Aug 2013

Fingerprint

Light emission
Nanorods
Semiconductor quantum wells
nanorods
light emission
quantum wells
Strain relaxation
Cathodoluminescence
Photoluminescence spectroscopy
Carrier transport
Spectral resolution
exploitation
optoelectronic devices
cathodoluminescence
spectral resolution
Optoelectronic devices
Nanostructures
spatial resolution
Electric fields
photoluminescence

Keywords

  • probing light emission
  • quantum wells
  • single nanorod

Cite this

@article{39e57c9756f8481aaec3efb6e66e854f,
title = "Probing light emission from quantum wells within a single nanorod",
abstract = "Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.",
keywords = "probing light emission, quantum wells, single nanorod",
author = "Jochen Bruckbauer and Edwards, {Paul R} and Jie Bai and Tao Wang and Martin, {Robert W}",
year = "2013",
month = "8",
day = "19",
doi = "10.1088/0957-4484/24/36/365704",
language = "English",
volume = "24",
journal = "Nanotechnology",
issn = "0957-4484",
number = "36",

}

Probing light emission from quantum wells within a single nanorod. / Bruckbauer, Jochen; Edwards, Paul R; Bai, Jie; Wang, Tao; Martin, Robert W.

In: Nanotechnology, Vol. 24, No. 36, 365704, 19.08.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Probing light emission from quantum wells within a single nanorod

AU - Bruckbauer, Jochen

AU - Edwards, Paul R

AU - Bai, Jie

AU - Wang, Tao

AU - Martin, Robert W

PY - 2013/8/19

Y1 - 2013/8/19

N2 - Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

AB - Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

KW - probing light emission

KW - quantum wells

KW - single nanorod

UR - http://iopscience.iop.org/0957-4484/

U2 - 10.1088/0957-4484/24/36/365704

DO - 10.1088/0957-4484/24/36/365704

M3 - Article

VL - 24

JO - Nanotechnology

T2 - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 36

M1 - 365704

ER -