A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.
|Publication status||Published - 7 Oct 1999|
- printed insulators
- electronic devices