Printed insulators for active and passive electronic devices

S. Wagner; Helena Gleskova; D. Shen

Printed insulators for active and passive electronic devices

S. Wagner (Inventor), Helena Gleskova (Inventor), D. Shen (Inventor)

Electronic And Electrical Engineering

Research output: Patent

Abstract

A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.

Original language	English
Patent number	WO9950889
Publication status	Published - 7 Oct 1999

Keywords

printed insulators
active
passive
electronic devices

Cite this

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title = "Printed insulators for active and passive electronic devices",

abstract = "A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates. ",

keywords = "printed insulators, active, passive, electronic devices",

author = "S. Wagner and Helena Gleskova and D. Shen",

year = "1999",

month = oct,

day = "7",

language = "English",

type = "Patent",

note = "WO9950889",

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TY - PAT

T1 - Printed insulators for active and passive electronic devices

AU - Wagner, S.

AU - Gleskova, Helena

AU - Shen, D.

PY - 1999/10/7

Y1 - 1999/10/7

N2 - A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.

AB - A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.

KW - printed insulators

KW - active

KW - passive

KW - electronic devices

M3 - Patent

M1 - WO9950889

ER -

Printed insulators for active and passive electronic devices

Abstract

Keywords

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Cite this