Printed insulators for active and passive electronic devices

S. Wagner (Inventor), Helena Gleskova (Inventor), D. Shen (Inventor)

Research output: Patent

Abstract

A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.
LanguageEnglish
Patent numberWO9950889
Publication statusPublished - 7 Oct 1999

Fingerprint

Printing
Thin film transistors
Organic polymers
Gate dielectrics
Electronic equipment
Temperature
Networks (circuits)
Substrates

Keywords

  • printed insulators
  • active
  • passive
  • electronic devices

Cite this

Wagner, S., Gleskova, H., & Shen, D. (1999). Printed insulators for active and passive electronic devices. (Patent No. WO9950889).
Wagner, S. (Inventor) ; Gleskova, Helena (Inventor) ; Shen, D. (Inventor). / Printed insulators for active and passive electronic devices. Patent No.: WO9950889.
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Wagner, S, Gleskova, H & Shen, D 1999, Printed insulators for active and passive electronic devices, Patent No. WO9950889.

Printed insulators for active and passive electronic devices. / Wagner, S. (Inventor); Gleskova, Helena (Inventor); Shen, D. (Inventor).

Patent No.: WO9950889.

Research output: Patent

TY - PAT

T1 - Printed insulators for active and passive electronic devices

AU - Wagner, S.

AU - Gleskova, Helena

AU - Shen, D.

PY - 1999/10/7

Y1 - 1999/10/7

N2 - A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.

AB - A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.

KW - printed insulators

KW - active

KW - passive

KW - electronic devices

M3 - Patent

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Wagner S, Gleskova H, Shen D, inventors. Printed insulators for active and passive electronic devices. WO9950889. 1999 Oct 7.