Power scaling of a directly diode-laser-pumped Ti:sapphire laser

Peter W. Roth, David Burns, Alan J. Kemp

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Improvements in the output power of a directly GaN diode-laser-pumped Ti:Al2O3 laser are achieved by using double-sided pumping. In continuous wave operation, an output power of 159 mW is reported. A tuning range of over 125 nm with output powers in excess of 100 mW is achieved. Pulses of 111 fs duration and an average power of 101 mW are demonstrated by mode locking the laser with a saturable Bragg reflector. Pumping with GaN diode lasers at wavelengths around 450 nm induces an additional parasitic crystal loss of about 1% per resonator roundtrip that is not observed at the conventional green pump wavelengths. (C) 2012 Optical Society of America

LanguageEnglish
Pages20629-20634
Number of pages6
JournalOptics Express
Volume20
Issue number18
DOIs
Publication statusPublished - 27 Aug 2012

Fingerprint

sapphire
semiconductor lasers
scaling
output
pumping
lasers
Bragg reflectors
wavelengths
locking
continuous radiation
resonators
tuning
pumps
pulses
crystals

Keywords

  • power scaling
  • diode-laser-pumped
  • Ti:sapphire laser

Cite this

Roth, Peter W. ; Burns, David ; Kemp, Alan J. / Power scaling of a directly diode-laser-pumped Ti:sapphire laser. In: Optics Express. 2012 ; Vol. 20, No. 18. pp. 20629-20634.
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Power scaling of a directly diode-laser-pumped Ti:sapphire laser. / Roth, Peter W.; Burns, David; Kemp, Alan J.

In: Optics Express, Vol. 20, No. 18, 27.08.2012, p. 20629-20634.

Research output: Contribution to journalArticle

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