Potential roughness near lithographically fabricated atom chips

P. Krüger, L. Andersson, S. Wildermuth, S. Hofferberth, E. Haller, S. Aigner, S. Groth, I. Bar-Joseph, J. Schmiedmayer

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100-mu m-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.
LanguageEnglish
Article number063621
Number of pages8
JournalPhysical Review A
Volume76
Issue number6
DOIs
Publication statusPublished - 28 Dec 2007

Fingerprint

roughness
chips
atoms
wire
stems
magnetic fields
disorders
gold
scaling

Keywords

  • magnetic microtraps
  • magnetic fields
  • current flow
  • time-orbiting magnetic fields
  • magnetic field roughness

Cite this

Krüger, P., Andersson, L., Wildermuth, S., Hofferberth, S., Haller, E., Aigner, S., ... Schmiedmayer, J. (2007). Potential roughness near lithographically fabricated atom chips. Physical Review A, 76(6), [063621]. https://doi.org/10.1103/PhysRevA.76.063621
Krüger, P. ; Andersson, L. ; Wildermuth, S. ; Hofferberth, S. ; Haller, E. ; Aigner, S. ; Groth, S. ; Bar-Joseph, I. ; Schmiedmayer, J. / Potential roughness near lithographically fabricated atom chips. In: Physical Review A. 2007 ; Vol. 76, No. 6.
@article{807d533dbe5144e493d4ea36eecad67c,
title = "Potential roughness near lithographically fabricated atom chips",
abstract = "Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100-mu m-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.",
keywords = "magnetic microtraps, magnetic fields, current flow, time-orbiting magnetic fields, magnetic field roughness",
author = "P. Kr{\"u}ger and L. Andersson and S. Wildermuth and S. Hofferberth and E. Haller and S. Aigner and S. Groth and I. Bar-Joseph and J. Schmiedmayer",
year = "2007",
month = "12",
day = "28",
doi = "10.1103/PhysRevA.76.063621",
language = "English",
volume = "76",
journal = "Physical Review A - Atomic, Molecular, and Optical Physics",
issn = "1050-2947",
number = "6",

}

Krüger, P, Andersson, L, Wildermuth, S, Hofferberth, S, Haller, E, Aigner, S, Groth, S, Bar-Joseph, I & Schmiedmayer, J 2007, 'Potential roughness near lithographically fabricated atom chips' Physical Review A, vol. 76, no. 6, 063621. https://doi.org/10.1103/PhysRevA.76.063621

Potential roughness near lithographically fabricated atom chips. / Krüger, P.; Andersson, L.; Wildermuth, S.; Hofferberth, S.; Haller, E.; Aigner, S.; Groth, S.; Bar-Joseph, I.; Schmiedmayer, J.

In: Physical Review A, Vol. 76, No. 6, 063621, 28.12.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Potential roughness near lithographically fabricated atom chips

AU - Krüger, P.

AU - Andersson, L.

AU - Wildermuth, S.

AU - Hofferberth, S.

AU - Haller, E.

AU - Aigner, S.

AU - Groth, S.

AU - Bar-Joseph, I.

AU - Schmiedmayer, J.

PY - 2007/12/28

Y1 - 2007/12/28

N2 - Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100-mu m-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.

AB - Potential roughness has been reported to severely impair experiments in magnetic microtraps. We show that these obstacles can be overcome as we measure disorder potentials that are reduced by two orders of magnitude near lithographically patterned high-quality gold layers on semiconductor atom chip substrates. The spectrum of the remaining field variations exhibits a favorable scaling. A detailed analysis of the magnetic field roughness of a 100-mu m-wide wire shows that these potentials stem from minute variations of the current flow caused by local properties of the wire rather than merely from rough edges. A technique for further reduction of potential roughness by several orders of magnitude based on time-orbiting magnetic fields is outlined.

KW - magnetic microtraps

KW - magnetic fields

KW - current flow

KW - time-orbiting magnetic fields

KW - magnetic field roughness

UR - http://link.aps.org/doi/10.1103/PhysRevA.76.063621

U2 - 10.1103/PhysRevA.76.063621

DO - 10.1103/PhysRevA.76.063621

M3 - Article

VL - 76

JO - Physical Review A - Atomic, Molecular, and Optical Physics

T2 - Physical Review A - Atomic, Molecular, and Optical Physics

JF - Physical Review A - Atomic, Molecular, and Optical Physics

SN - 1050-2947

IS - 6

M1 - 063621

ER -

Krüger P, Andersson L, Wildermuth S, Hofferberth S, Haller E, Aigner S et al. Potential roughness near lithographically fabricated atom chips. Physical Review A. 2007 Dec 28;76(6). 063621. https://doi.org/10.1103/PhysRevA.76.063621