Abstract
The polarization properties of GaN nanowire lasers are studied experimentally by analyzing their end-facet emission. We demonstrate that the polarization state varies for different transverse modes. Linear and elliptical polarizations are observed in our measurements.
Original language | English |
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Title of host publication | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
Publisher | IEEE |
Number of pages | 2 |
ISBN (Print) | 9781557529725 |
Publication status | Published - 1 Jan 2013 |
Event | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 9 Jun 2013 → 14 Jun 2013 |
Conference
Conference | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 9/06/13 → 14/06/13 |
Keywords
- Gallium nitride
- polarization
- GaN nanowires
- semiconductor lasers
- nanophotonics and photonic crystals