Polarization properties of GaN nanowire lasers

A. Hurtado, J. B. Wright, Sheng Liu, Q. Li, G. T. Wang, T. S. Luk, J. J. Figiel, K. Cross, G. Balakrishnan, L. F. Lester, I. Brener

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

The polarization properties of GaN nanowire lasers are studied experimentally by analyzing their end-facet emission. We demonstrate that the polarization state varies for different transverse modes. Linear and elliptical polarizations are observed in our measurements.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE
Number of pages2
ISBN (Print)9781557529725
Publication statusPublished - 1 Jan 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

Keywords

  • Gallium nitride
  • polarization
  • GaN nanowires
  • semiconductor lasers
  • nanophotonics and photonic crystals

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  • Cite this

    Hurtado, A., Wright, J. B., Liu, S., Li, Q., Wang, G. T., Luk, T. S., Figiel, J. J., Cross, K., Balakrishnan, G., Lester, L. F., & Brener, I. (2013). Polarization properties of GaN nanowire lasers. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833715] IEEE.