Abstract
The polarization properties of GaN nanowire lasers are studied experimentally by analyzing their end-facet emission. We demonstrate that the polarization state varies for different transverse modes. Linear and elliptical polarizations are observed in our measurements.
Original language | English |
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Title of host publication | CLEO: Science and Innovations, CLEO_SI 2013 |
Pages | 1-2 |
Number of pages | 2 |
Publication status | Published - 18 Nov 2013 |
Event | CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United Kingdom Duration: 9 Jun 2013 → 14 Jun 2013 |
Conference
Conference | CLEO: Science and Innovations, CLEO_SI 2013 |
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Country/Territory | United Kingdom |
City | San Jose, CA |
Period | 9/06/13 → 14/06/13 |
Keywords
- semiconductor lasers
- nanophotonics and photonic crystals
- polarization properties
- GaN nanowire lasers