Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells

Antonio Llopis, Sérgio M.S. Pereira, Ian M. Watson, A. Neogi

Research output: Contribution to journalArticle

Abstract

Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.
LanguageEnglish
Article number091103
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number9
DOIs
Publication statusPublished - 1 Sep 2014

Fingerprint

quantum wells
nanoparticles
emitters
electrons
room temperature
replicas
nitrides
Raman spectroscopy
silver
photoluminescence
augmentation
interactions

Keywords

  • phonons
  • quantum wells
  • plasmonic modification
  • phonon coupling
  • InGaN/GaN quantum well

Cite this

@article{b99fb88a24c64529884e8d5e28eeccf1,
title = "Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells",
abstract = "Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.",
keywords = "phonons, quantum wells, plasmonic modification, phonon coupling, InGaN/GaN quantum well",
author = "Antonio Llopis and Pereira, {S{\'e}rgio M.S.} and Watson, {Ian M.} and A. Neogi",
year = "2014",
month = "9",
day = "1",
doi = "10.1063/1.4894371",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "9",

}

Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells. / Llopis, Antonio; Pereira, Sérgio M.S.; Watson, Ian M.; Neogi, A.

In: Applied Physics Letters, Vol. 105, No. 9, 091103, 01.09.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells

AU - Llopis, Antonio

AU - Pereira, Sérgio M.S.

AU - Watson, Ian M.

AU - Neogi, A.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.

AB - Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.

KW - phonons

KW - quantum wells

KW - plasmonic modification

KW - phonon coupling

KW - InGaN/GaN quantum well

U2 - 10.1063/1.4894371

DO - 10.1063/1.4894371

M3 - Article

VL - 105

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 091103

ER -