Abstract
The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.
| Original language | English |
|---|---|
| Article number | 084503 |
| Number of pages | 10 |
| Journal | Journal of Applied Physics |
| Volume | 115 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 28 Feb 2014 |
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Keywords
- electrical resistivity
- light emitting diodes
- current density
- electric currents
- GaN micro light emitting diodes
- current transmition
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Planar micro- and nano-patterning of GaN light-emitting diodes : guidelines and limitations. / Herrnsdorf, Johannes; Xie, Enyuan; Watson, Ian M.; Laurand, Nicolas; Dawson, Martin D.
In: Journal of Applied Physics, Vol. 115, No. 8, 084503, 28.02.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Planar micro- and nano-patterning of GaN light-emitting diodes
T2 - guidelines and limitations
AU - Herrnsdorf, Johannes
AU - Xie, Enyuan
AU - Watson, Ian M.
AU - Laurand, Nicolas
AU - Dawson, Martin D.
N1 - (c) American Institute of Physics
PY - 2014/2/28
Y1 - 2014/2/28
N2 - The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.
AB - The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.
KW - electrical resistivity
KW - light emitting diodes
KW - current density
KW - electric currents
KW - GaN micro light emitting diodes
KW - current transmition
UR - http://www.scopus.com/inward/record.url?scp=84896760946&partnerID=8YFLogxK
UR - http://scitation.aip.org/content/aip/journal/jap
U2 - 10.1063/1.4866496
DO - 10.1063/1.4866496
M3 - Article
VL - 115
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 084503
ER -