Planar micro- and nano-patterning of GaN light-emitting diodes: guidelines and limitations

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Abstract

The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.

LanguageEnglish
Article number084503
Number of pages10
JournalJournal of Applied Physics
Volume115
Issue number8
DOIs
Publication statusPublished - 28 Feb 2014

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light emitting diodes
emitters
spatial resolution
electrical resistivity
high resolution

Keywords

  • electrical resistivity
  • light emitting diodes
  • current density
  • electric currents
  • GaN micro light emitting diodes
  • current transmition

Cite this

@article{6a0d51696c9543c0af60706d15f67de3,
title = "Planar micro- and nano-patterning of GaN light-emitting diodes: guidelines and limitations",
abstract = "The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.",
keywords = "electrical resistivity, light emitting diodes, current density, electric currents, GaN micro light emitting diodes, current transmition",
author = "Johannes Herrnsdorf and Enyuan Xie and Watson, {Ian M.} and Nicolas Laurand and Dawson, {Martin D.}",
note = "(c) American Institute of Physics",
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TY - JOUR

T1 - Planar micro- and nano-patterning of GaN light-emitting diodes

T2 - Journal of Applied Physics

AU - Herrnsdorf, Johannes

AU - Xie, Enyuan

AU - Watson, Ian M.

AU - Laurand, Nicolas

AU - Dawson, Martin D.

N1 - (c) American Institute of Physics

PY - 2014/2/28

Y1 - 2014/2/28

N2 - The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.

AB - The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.

KW - electrical resistivity

KW - light emitting diodes

KW - current density

KW - electric currents

KW - GaN micro light emitting diodes

KW - current transmition

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