Projects per year
Abstract
The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.
Original language | English |
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Article number | 084503 |
Number of pages | 10 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 8 |
DOIs | |
Publication status | Published - 28 Feb 2014 |
Keywords
- electrical resistivity
- light emitting diodes
- current density
- electric currents
- GaN micro light emitting diodes
- current transmition
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Dive into the research topics of 'Planar micro- and nano-patterning of GaN light-emitting diodes: guidelines and limitations'. Together they form a unique fingerprint.Projects
- 1 Finished
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Ultra-Parallel Visible Light Communications (UP-VLC)
Dawson, M., Calvez, S. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/12 → 28/02/17
Project: Research