Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon

O. Andersen, L. Dobaczewski, A.R. Peaker, K. Bonde Nielsen, B. Hourahine, R. Jones, P.R. Briddon, S. Öberg

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have observed the donor (Ec−0.22 eV) and acceptor (Ec−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen–carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.
Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - 31 Dec 2001

Fingerprint

Silicon
Deep level transient spectroscopy
silicon
Defects
Electron emission
Laplace transforms
Ion implantation
Temperature
Protons
Hydrogen
defects
electron emission
spectroscopy
implantation
alignment
protons
symmetry
room temperature
hydrogen
configurations

Keywords

  • hydrogen-carbon pair
  • silicon
  • uniaxial stress
  • laplace DLTS

Cite this

Andersen, O., Dobaczewski, L., Peaker, A. R., Bonde Nielsen, K., Hourahine, B., Jones, R., ... Öberg, S. (2001). Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon. Physica B: Condensed Matter, 308-310, 139-142. https://doi.org/10.1016/S0921-4526(01)00672-X
Andersen, O. ; Dobaczewski, L. ; Peaker, A.R. ; Bonde Nielsen, K. ; Hourahine, B. ; Jones, R. ; Briddon, P.R. ; Öberg, S. / Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon. In: Physica B: Condensed Matter. 2001 ; Vol. 308-310. pp. 139-142.
@article{43f030a6ac184ebfa030bd848376c04b,
title = "Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon",
abstract = "We have observed the donor (Ec−0.22 eV) and acceptor (Ec−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen–carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.",
keywords = "hydrogen-carbon pair, silicon, uniaxial stress, laplace DLTS",
author = "O. Andersen and L. Dobaczewski and A.R. Peaker and {Bonde Nielsen}, K. and B. Hourahine and R. Jones and P.R. Briddon and S. {\"O}berg",
year = "2001",
month = "12",
day = "31",
doi = "10.1016/S0921-4526(01)00672-X",
language = "English",
volume = "308-310",
pages = "139--142",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",

}

Andersen, O, Dobaczewski, L, Peaker, AR, Bonde Nielsen, K, Hourahine, B, Jones, R, Briddon, PR & Öberg, S 2001, 'Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon', Physica B: Condensed Matter, vol. 308-310, pp. 139-142. https://doi.org/10.1016/S0921-4526(01)00672-X

Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon. / Andersen, O.; Dobaczewski, L.; Peaker, A.R.; Bonde Nielsen, K.; Hourahine, B.; Jones, R.; Briddon, P.R.; Öberg, S.

In: Physica B: Condensed Matter, Vol. 308-310, 31.12.2001, p. 139-142.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon

AU - Andersen, O.

AU - Dobaczewski, L.

AU - Peaker, A.R.

AU - Bonde Nielsen, K.

AU - Hourahine, B.

AU - Jones, R.

AU - Briddon, P.R.

AU - Öberg, S.

PY - 2001/12/31

Y1 - 2001/12/31

N2 - We have observed the donor (Ec−0.22 eV) and acceptor (Ec−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen–carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.

AB - We have observed the donor (Ec−0.22 eV) and acceptor (Ec−0.16 eV) levels related to hydrogen–carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen–carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen–carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.

KW - hydrogen-carbon pair

KW - silicon

KW - uniaxial stress

KW - laplace DLTS

UR - http://www.sciencedirect.com/science/journal/09214526

U2 - 10.1016/S0921-4526(01)00672-X

DO - 10.1016/S0921-4526(01)00672-X

M3 - Article

VL - 308-310

SP - 139

EP - 142

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -