Piezoelectric III-V and II-VI semiconductors

Fabien Massabuau, Yonatan Calahorra

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.
Original languageEnglish
Title of host publicationElsevier Reference Collection in Materials Science and Materials Engineering
Place of Publication[Amsterdam]
DOIs
Publication statusPublished - 12 Nov 2020

Keywords

  • bandgap
  • optoelectronics
  • piezoelectricity
  • piezotronics
  • semiconductor
  • wurtzite
  • zinc-blende

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