Piezoelectric III-V and II-VI semiconductors

Fabien Massabuau; Yonatan Calahorra

doi:10.1016/B978-0-12-815732-9.00049-8

Piezoelectric III-V and II-VI semiconductors

Fabien Massabuau, Yonatan Calahorra

Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.

Original language	English
Title of host publication	Elsevier Reference Collection in Materials Science and Materials Engineering
Place of Publication	[Amsterdam]
DOIs	https://doi.org/10.1016/B978-0-12-815732-9.00049-8
Publication status	Published - 12 Nov 2020

Keywords

bandgap
optoelectronics
piezoelectricity
piezotronics
semiconductor
wurtzite
zinc-blende

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10.1016/B978-0-12-815732-9.00049-8

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abstract = "For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.",

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AB - For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.

KW - bandgap

KW - optoelectronics

KW - piezoelectricity

KW - piezotronics

KW - semiconductor

KW - wurtzite

KW - zinc-blende

U2 - 10.1016/B978-0-12-815732-9.00049-8

DO - 10.1016/B978-0-12-815732-9.00049-8

M3 - Chapter

BT - Elsevier Reference Collection in Materials Science and Materials Engineering

CY - [Amsterdam]

ER -

Piezoelectric III-V and II-VI semiconductors

Abstract

Keywords

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