For the past decades, group III-V and II-VI semiconductors have been at the forefront of semiconductor advances. However, the ionic bonds and non-centrosymmetry of their crystal structure – wurtzite or zinc-blende – imply that these materials are prone to exhibit piezoelectric effects. While piezoelectricity can be desired in some semiconductor devices, it can be harmful to others. After a general overview of the structural, piezoelectric, and electronic properties of group III-V and II-VI semiconductor materials we present the effect of piezoelectricity on devices and discuss mitigation strategies in relation to piezoelectricity.
|Title of host publication||Elsevier Reference Collection in Materials Science and Materials Engineering|
|Place of Publication||[Amsterdam]|
|Publication status||Published - 12 Nov 2020|