Photostimulated emission of GaN layers and devices

K.P. O'Donnell; M. Umlauff; M. Kraushaar; H. Kalt; O. Briot

doi:10.1016/S0921-5107(97)00188-8

Photostimulated emission of GaN layers and devices

K.P. O'Donnell^*, M. Umlauff, M. Kraushaar, H. Kalt, O. Briot

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm^-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.

Original language	English
Pages (from-to)	264-267
Number of pages	4
Journal	Materials Science and Engineering B
Volume	50
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00188-8
Publication status	Published - 18 Dec 1997

Funding

This work was partially funded by the Deutsches Forschungemeinschaft who supported a sabbatical visit by KPOD to the University of Karlsruhe in the summer of 1996.

Keywords

edge-emitted light
photoexcitation densities
photostimulated emission

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10.1016/S0921-5107(97)00188-8

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title = "Photostimulated emission of GaN layers and devices",

abstract = "Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.",

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T1 - Photostimulated emission of GaN layers and devices

AU - O'Donnell, K.P.

AU - Umlauff, M.

AU - Kraushaar, M.

AU - Kalt, H.

AU - Briot, O.

PY - 1997/12/18

Y1 - 1997/12/18

N2 - Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.

AB - Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.

KW - edge-emitted light

KW - photoexcitation densities

KW - photostimulated emission

UR - https://www.scopus.com/pages/publications/0009309546

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DO - 10.1016/S0921-5107(97)00188-8

M3 - Article

AN - SCOPUS:0009309546

SN - 0921-5107

VL - 50

SP - 264

EP - 267

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Photostimulated emission of GaN layers and devices

Abstract

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Keywords

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