Photostimulated emission of GaN layers and devices

K.P. O'Donnell, M. Umlauff, M. Kraushaar, H. Kalt, O. Briot

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.

LanguageEnglish
Pages264-267
Number of pages4
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
DOIs
Publication statusPublished - 18 Dec 1997

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Photoexcitation
Epitaxial layers
Light emitting diodes
Photons
Temperature
Geometry
photoexcitation
emission spectra
light emitting diodes
energy
photons
room temperature
geometry
temperature

Keywords

  • edge-emitted light
  • photoexcitation densities
  • photostimulated emission

Cite this

O'Donnell, K.P. ; Umlauff, M. ; Kraushaar, M. ; Kalt, H. ; Briot, O. / Photostimulated emission of GaN layers and devices. In: Materials Science and Engineering B. 1997 ; Vol. 50, No. 1-3. pp. 264-267.
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Photostimulated emission of GaN layers and devices. / O'Donnell, K.P.; Umlauff, M.; Kraushaar, M.; Kalt, H.; Briot, O.

In: Materials Science and Engineering B, Vol. 50, No. 1-3, 18.12.1997, p. 264-267.

Research output: Contribution to journalArticle

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T1 - Photostimulated emission of GaN layers and devices

AU - O'Donnell, K.P.

AU - Umlauff, M.

AU - Kraushaar, M.

AU - Kalt, H.

AU - Briot, O.

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