TY - JOUR
T1 - Photostimulated emission of GaN layers and devices
AU - O'Donnell, K.P.
AU - Umlauff, M.
AU - Kraushaar, M.
AU - Kalt, H.
AU - Briot, O.
PY - 1997/12/18
Y1 - 1997/12/18
N2 - Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.
AB - Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.
KW - edge-emitted light
KW - photoexcitation densities
KW - photostimulated emission
UR - http://www.scopus.com/inward/record.url?scp=0009309546&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(97)00188-8
DO - 10.1016/S0921-5107(97)00188-8
M3 - Article
AN - SCOPUS:0009309546
SN - 0921-5107
VL - 50
SP - 264
EP - 267
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
IS - 1-3
ER -