Photostimulated emission of GaN layers and devices

K.P. O'Donnell*, M. Umlauff, M. Kraushaar, H. Kalt, O. Briot

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Photostimulated emission (PSE) of epitaxial GaN layers is readily obtained at photoexcitation densities of order MW cm-2 at temperatures up to room temperature. We report surprising spectral differences between PSE obtained using surface and edge emission geometries for a particular sample. While the peak energy of PSE from the surface of this sample is downshifted from the GaN band edge by only a small amount, the photon energy of the edge-emitted light is reduced by ∼ 100 meV. Exactly the same downshift is observed in the edge emission spectrum of a commercial Nichia light emitting diode. The origin of the anomalous PSE peaks revealed in these measurements is discussed with reference to recent literature.

Original languageEnglish
Pages (from-to)264-267
Number of pages4
JournalMaterials Science and Engineering B
Issue number1-3
Publication statusPublished - 18 Dec 1997


  • edge-emitted light
  • photoexcitation densities
  • photostimulated emission


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