Photoresist-free fabrication process for a-Si:H thin film transistors

H. Gleskova; S. Wagner; D. S. Shen

doi:10.1016/S0022-3093(98)00308-1

Photoresist-free fabrication process for a-Si:H thin film transistors

H. Gleskova^*, S. Wagner, D. S. Shen

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 10⁷, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm² V^-1 s^-1.

Original language	English
Pages (from-to)	1217-1220
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	227-230
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(98)00308-1
Publication status	Published - 1 May 1998
Event	17th International Conference on Amorphous and Microcrystalline Semiconductors - Budapest, Hungary Duration: 25 Aug 1997 → 29 Aug 1997

Keywords

thin-film transistors
photoresist

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10.1016/S0022-3093(98)00308-1

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title = "Photoresist-free fabrication process for a-Si:H thin film transistors",

abstract = "We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.",

keywords = "thin-film transistors , photoresist",

author = "H. Gleskova and S. Wagner and Shen, {D. S.}",

year = "1998",

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AU - Gleskova, H.

AU - Wagner, S.

AU - Shen, D. S.

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Y1 - 1998/5/1

N2 - We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.

AB - We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.

KW - thin-film transistors

KW - photoresist

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U2 - 10.1016/S0022-3093(98)00308-1

DO - 10.1016/S0022-3093(98)00308-1

M3 - Article

AN - SCOPUS:0032065118

SN - 0022-3093

VL - 227-230

SP - 1217

EP - 1220

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

T2 - 17th International Conference on Amorphous and Microcrystalline Semiconductors

Y2 - 25 August 1997 through 29 August 1997

ER -

Photoresist-free fabrication process for a-Si:H thin film transistors

Abstract

Keywords

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