We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.
|Number of pages||4|
|Journal||Journal of Non-Crystalline Solids|
|Issue number||PART 2|
|Publication status||Published - 1 May 1998|
|Event||17th International Conference on Amorphous and Microcrystalline Semiconductors - Budapest, Hungary|
Duration: 25 Aug 1997 → 29 Aug 1997
- thin-film transistors