Photoresist-free fabrication process for a-Si:H thin film transistors

H. Gleskova, S. Wagner, D. S. Shen

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)1217-1220
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - 1 May 1998
Event17th International Conference on Amorphous and Microcrystalline Semiconductors - Budapest, Hungary
Duration: 25 Aug 199729 Aug 1997


  • thin-film transistors
  • photoresist


Dive into the research topics of 'Photoresist-free fabrication process for a-Si:H thin film transistors'. Together they form a unique fingerprint.

Cite this