Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures.
- photonic crystal
- GaN pyramids