Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids

D. Coquillat, M. Le Vassor D'Yerville, T.S.A. Boubang, C. Liu, K. Bejtka, I.M. Watson, P.R. Edwards, R.W. Martin, H.M.H. Chong, R.M. De La Rue

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Abstract

Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array of flat-topped GaN micropyramids with micrometre-scale periodicity, and the other made up of sharp-tipped pyramids with sub-micrometre periodicity. Angularly resolved reflection and transmission measurements revealed the presence of sharp resonances associated with resonant Bloch modes. As a result, the photonic band structure was determined along symmetry directions of the reciprocal lattice for the two PhC structures.
Original languageEnglish
Pages (from-to)95-99
Number of pages4
JournalPhysica Status Solidi C
Volume4
DOIs
Publication statusPublished - 2007

Keywords

  • photonic crystal
  • GaN pyramids
  • micropyramids
  • photonicband
  • wave-guides
  • microcavities

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