Photoluminescence studies of Eu-implanted GaN epilayers

V Katchkanov, KP O'Donnell, S Dalmasso, RW Martin, A Braud, Y Nakanishi, A Wakahara, A Yoshida

Research output: Contribution to journalArticle

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Abstract

Photoluminescence (PL) of Eu-implanted GaN epilayers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) was studied as a function of temperature. The implantation was done at ion energies of 75 keV, 200 keV and 350 keV with doses of 10(14) CM-2 and 10(15) CM-2. PL spectra of all samples show the emission 5 7 31 line assigned to the D-5(0)-F-7(2) transition of EU3+ in GaN to be split into three spectral components at 620.7 nm, 621.6 nm and 622.5 nm. The split lines are seen to have very different temperature dependences of integrated intensity. Such splitting might be explained by EU3+ ion site multiplicity. The variation of the temperature quenching factor of the PL integrated intensity from sample to sample and from line to line suggests that optically active Eu3+ ions are coupled to defects and impurities, thus forming complexes with different energy position of the carrier trapping level in the bandgap of GaN. The appearance and quenching of an additional PL line at 617.3 nm with increasing temperature is observed in the range of 13-295 K.
LanguageEnglish
Pages1491-1496
Number of pages6
JournalPhysica Status Solidi B
Volume242
Issue number7
DOIs
Publication statusPublished - 1 Jun 2005

Fingerprint

Epilayers
Photoluminescence
photoluminescence
Ions
Quenching
quenching
Temperature
ions
Metallorganic vapor phase epitaxy
vapor phase epitaxy
Ion implantation
temperature
implantation
Energy gap
trapping
Impurities
impurities
dosage
Defects
temperature dependence

Keywords

  • photoluminescence
  • luminescence
  • vapour phase epitaxy

Cite this

Katchkanov, V., O'Donnell, KP., Dalmasso, S., Martin, RW., Braud, A., Nakanishi, Y., ... Yoshida, A. (2005). Photoluminescence studies of Eu-implanted GaN epilayers. Physica Status Solidi B, 242(7), 1491-1496. https://doi.org/10.1002/pssb.200440032
Katchkanov, V ; O'Donnell, KP ; Dalmasso, S ; Martin, RW ; Braud, A ; Nakanishi, Y ; Wakahara, A ; Yoshida, A. / Photoluminescence studies of Eu-implanted GaN epilayers. In: Physica Status Solidi B. 2005 ; Vol. 242, No. 7. pp. 1491-1496.
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Katchkanov, V, O'Donnell, KP, Dalmasso, S, Martin, RW, Braud, A, Nakanishi, Y, Wakahara, A & Yoshida, A 2005, 'Photoluminescence studies of Eu-implanted GaN epilayers' Physica Status Solidi B, vol. 242, no. 7, pp. 1491-1496. https://doi.org/10.1002/pssb.200440032

Photoluminescence studies of Eu-implanted GaN epilayers. / Katchkanov, V; O'Donnell, KP; Dalmasso, S; Martin, RW; Braud, A; Nakanishi, Y; Wakahara, A; Yoshida, A.

In: Physica Status Solidi B, Vol. 242, No. 7, 01.06.2005, p. 1491-1496.

Research output: Contribution to journalArticle

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T1 - Photoluminescence studies of Eu-implanted GaN epilayers

AU - Katchkanov, V

AU - O'Donnell, KP

AU - Dalmasso, S

AU - Martin, RW

AU - Braud, A

AU - Nakanishi, Y

AU - Wakahara, A

AU - Yoshida, A

PY - 2005/6/1

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N2 - Photoluminescence (PL) of Eu-implanted GaN epilayers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) was studied as a function of temperature. The implantation was done at ion energies of 75 keV, 200 keV and 350 keV with doses of 10(14) CM-2 and 10(15) CM-2. PL spectra of all samples show the emission 5 7 31 line assigned to the D-5(0)-F-7(2) transition of EU3+ in GaN to be split into three spectral components at 620.7 nm, 621.6 nm and 622.5 nm. The split lines are seen to have very different temperature dependences of integrated intensity. Such splitting might be explained by EU3+ ion site multiplicity. The variation of the temperature quenching factor of the PL integrated intensity from sample to sample and from line to line suggests that optically active Eu3+ ions are coupled to defects and impurities, thus forming complexes with different energy position of the carrier trapping level in the bandgap of GaN. The appearance and quenching of an additional PL line at 617.3 nm with increasing temperature is observed in the range of 13-295 K.

AB - Photoluminescence (PL) of Eu-implanted GaN epilayers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) was studied as a function of temperature. The implantation was done at ion energies of 75 keV, 200 keV and 350 keV with doses of 10(14) CM-2 and 10(15) CM-2. PL spectra of all samples show the emission 5 7 31 line assigned to the D-5(0)-F-7(2) transition of EU3+ in GaN to be split into three spectral components at 620.7 nm, 621.6 nm and 622.5 nm. The split lines are seen to have very different temperature dependences of integrated intensity. Such splitting might be explained by EU3+ ion site multiplicity. The variation of the temperature quenching factor of the PL integrated intensity from sample to sample and from line to line suggests that optically active Eu3+ ions are coupled to defects and impurities, thus forming complexes with different energy position of the carrier trapping level in the bandgap of GaN. The appearance and quenching of an additional PL line at 617.3 nm with increasing temperature is observed in the range of 13-295 K.

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KW - vapour phase epitaxy

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