Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure

N. Ben Sedrine, T. C. Esteves, J. Rodrigues, L. Rino, M. R. Correia, M. C. Sequeira, A. J. Neves, E. Alves, M. Boćkowski, P. R. Edwards, K.P. O'Donnell, K. Lorenz, T. Monteiro

Research output: Contribution to journalArticle

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Abstract

In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown by metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C and 1200 °C) and high pressure (1.1 GPa) were analysed by spectroscopic techniques, and the annealing effect on the photoluminescence is deeply explored. Under laser excitation of 3.8 eV at room temperature, the as-grown structure exhibits two main emission bands: a yellow band peaked at 2.14 eV and a blue band peaked at 2.8 eV resulting in white light perception. Interestingly, the stability of the white light is preserved after annealing at the lowest temperature (1000 °C), but suppressed for higher temperatures due to a deterioration of the blue quantum well emission. Moreover, the control of the yellow/blue bands intensity ratio, responsible for the white colour coordinate temperatures, could be achieved after annealing at 1000 °C. The room temperature white emission is studied as a function of incident power density, and the correlated colour temperature values are found to be in the warm white range: 3260–4000 K.
LanguageEnglish
Article number13739
Number of pages7
JournalScientific Reports
Volume5
Early online date4 Sep 2015
DOIs
Publication statusPublished - 2015

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light emission
quantum wells
photoluminescence
annealing
color
room temperature
deterioration
metalorganic chemical vapor deposition
radiant flux density
temperature
excitation
lasers

Keywords

  • light emitting diodes
  • LEDs
  • photoluminescence

Cite this

Ben Sedrine, N., Esteves, T. C., Rodrigues, J., Rino, L., Correia, M. R., Sequeira, M. C., ... Monteiro, T. (2015). Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. Scientific Reports, 5, [13739]. https://doi.org/10.1038/srep13739
Ben Sedrine, N. ; Esteves, T. C. ; Rodrigues, J. ; Rino, L. ; Correia, M. R. ; Sequeira, M. C. ; Neves, A. J. ; Alves, E. ; Boćkowski, M. ; Edwards, P. R. ; O'Donnell, K.P. ; Lorenz, K. ; Monteiro, T. / Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. In: Scientific Reports. 2015 ; Vol. 5.
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title = "Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure",
abstract = "In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown by metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C and 1200 °C) and high pressure (1.1 GPa) were analysed by spectroscopic techniques, and the annealing effect on the photoluminescence is deeply explored. Under laser excitation of 3.8 eV at room temperature, the as-grown structure exhibits two main emission bands: a yellow band peaked at 2.14 eV and a blue band peaked at 2.8 eV resulting in white light perception. Interestingly, the stability of the white light is preserved after annealing at the lowest temperature (1000 °C), but suppressed for higher temperatures due to a deterioration of the blue quantum well emission. Moreover, the control of the yellow/blue bands intensity ratio, responsible for the white colour coordinate temperatures, could be achieved after annealing at 1000 °C. The room temperature white emission is studied as a function of incident power density, and the correlated colour temperature values are found to be in the warm white range: 3260–4000 K.",
keywords = "light emitting diodes, LEDs, photoluminescence",
author = "{Ben Sedrine}, N. and Esteves, {T. C.} and J. Rodrigues and L. Rino and Correia, {M. R.} and Sequeira, {M. C.} and Neves, {A. J.} and E. Alves and M. Boćkowski and Edwards, {P. R.} and K.P. O'Donnell and K. Lorenz and T. Monteiro",
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Ben Sedrine, N, Esteves, TC, Rodrigues, J, Rino, L, Correia, MR, Sequeira, MC, Neves, AJ, Alves, E, Boćkowski, M, Edwards, PR, O'Donnell, KP, Lorenz, K & Monteiro, T 2015, 'Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure' Scientific Reports, vol. 5, 13739. https://doi.org/10.1038/srep13739

Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. / Ben Sedrine, N.; Esteves, T. C.; Rodrigues, J.; Rino, L.; Correia, M. R.; Sequeira, M. C.; Neves, A. J.; Alves, E.; Boćkowski, M.; Edwards, P. R.; O'Donnell, K.P.; Lorenz, K.; Monteiro, T.

In: Scientific Reports, Vol. 5, 13739, 2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure

AU - Ben Sedrine, N.

AU - Esteves, T. C.

AU - Rodrigues, J.

AU - Rino, L.

AU - Correia, M. R.

AU - Sequeira, M. C.

AU - Neves, A. J.

AU - Alves, E.

AU - Boćkowski, M.

AU - Edwards, P. R.

AU - O'Donnell, K.P.

AU - Lorenz, K.

AU - Monteiro, T.

PY - 2015

Y1 - 2015

N2 - In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown by metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C and 1200 °C) and high pressure (1.1 GPa) were analysed by spectroscopic techniques, and the annealing effect on the photoluminescence is deeply explored. Under laser excitation of 3.8 eV at room temperature, the as-grown structure exhibits two main emission bands: a yellow band peaked at 2.14 eV and a blue band peaked at 2.8 eV resulting in white light perception. Interestingly, the stability of the white light is preserved after annealing at the lowest temperature (1000 °C), but suppressed for higher temperatures due to a deterioration of the blue quantum well emission. Moreover, the control of the yellow/blue bands intensity ratio, responsible for the white colour coordinate temperatures, could be achieved after annealing at 1000 °C. The room temperature white emission is studied as a function of incident power density, and the correlated colour temperature values are found to be in the warm white range: 3260–4000 K.

AB - In this work we demonstrate by photoluminescence studies white light emission from a monolithic InGaN/GaN single quantum well structure grown by metal organic chemical vapour deposition. As-grown and thermally annealed samples at high temperature (1000 °C, 1100 °C and 1200 °C) and high pressure (1.1 GPa) were analysed by spectroscopic techniques, and the annealing effect on the photoluminescence is deeply explored. Under laser excitation of 3.8 eV at room temperature, the as-grown structure exhibits two main emission bands: a yellow band peaked at 2.14 eV and a blue band peaked at 2.8 eV resulting in white light perception. Interestingly, the stability of the white light is preserved after annealing at the lowest temperature (1000 °C), but suppressed for higher temperatures due to a deterioration of the blue quantum well emission. Moreover, the control of the yellow/blue bands intensity ratio, responsible for the white colour coordinate temperatures, could be achieved after annealing at 1000 °C. The room temperature white emission is studied as a function of incident power density, and the correlated colour temperature values are found to be in the warm white range: 3260–4000 K.

KW - light emitting diodes

KW - LEDs

KW - photoluminescence

U2 - 10.1038/srep13739

DO - 10.1038/srep13739

M3 - Article

VL - 5

JO - Scientific Reports

T2 - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

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ER -