Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

E. Pincik, H. Kobayashi, M. Takahashi, N. Fujiwara, R. Brunner, H. Gleskova, M. Jergel, J. Mullerova, M. Kucera, C. Falcony, L. Ortega, J. Rusnak, M. Mikula, M. Zahoran, R. Jurani, M. Kral

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Abstract

This paper deals with the photoluminescence, structural and electricalproperties of chemically passivated a-Si:H basedthinfilms and correspondingthinfilmsolarcells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electricalproperties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solarcells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solarcell multilayer structures was achieved which is of primary practical importance.
LanguageEnglish
Pages351-363
Number of pages13
JournalApplied Surface Science
Volume235
Issue number3
DOIs
Publication statusPublished - 2004
Event3rd International Workshop on Semiconductor Surface Passivation - Ustron, Poland
Duration: 15 Sep 200317 Sep 2003

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Structural properties
Solar cells
Photoluminescence
Electric properties
Deep level transient spectroscopy
Passivation
Thin films
Defects
Dangling bonds
Cyanides
Photodetectors
X ray diffraction analysis
Multilayers
Energy gap
Water
Lasers

Keywords

  • amorphous silicon
  • solar cells
  • thin films
  • photoluminescence

Cite this

Pincik, E. ; Kobayashi, H. ; Takahashi, M. ; Fujiwara, N. ; Brunner, R. ; Gleskova, H. ; Jergel, M. ; Mullerova, J. ; Kucera, M. ; Falcony, C. ; Ortega, L. ; Rusnak, J. ; Mikula, M. ; Zahoran, M. ; Jurani, R. ; Kral, M. . / Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells. In: Applied Surface Science. 2004 ; Vol. 235, No. 3. pp. 351-363.
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abstract = "This paper deals with the photoluminescence, structural and electricalproperties of chemically passivated a-Si:H basedthinfilms and correspondingthinfilmsolarcells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electricalproperties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solarcells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solarcell multilayer structures was achieved which is of primary practical importance.",
keywords = "amorphous silicon, solar cells, thin films, photoluminescence",
author = "E. Pincik and H. Kobayashi and M. Takahashi and N. Fujiwara and R. Brunner and H. Gleskova and M. Jergel and J. Mullerova and M. Kucera and C. Falcony and L. Ortega and J. Rusnak and M. Mikula and M. Zahoran and R. Jurani and M. Kral",
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Pincik, E, Kobayashi, H, Takahashi, M, Fujiwara, N, Brunner, R, Gleskova, H, Jergel, M, Mullerova, J, Kucera, M, Falcony, C, Ortega, L, Rusnak, J, Mikula, M, Zahoran, M, Jurani, R & Kral, M 2004, 'Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells' Applied Surface Science, vol. 235, no. 3, pp. 351-363. https://doi.org/10.1016/j.apsusc.2004.05.107

Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells. / Pincik, E. ; Kobayashi, H.; Takahashi, M. ; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M. ; Mullerova, J.; Kucera, M. ; Falcony, C.; Ortega, L. ; Rusnak, J. ; Mikula, M.; Zahoran, M. ; Jurani, R.; Kral, M. .

In: Applied Surface Science, Vol. 235, No. 3, 2004, p. 351-363.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

AU - Pincik, E.

AU - Kobayashi, H.

AU - Takahashi, M.

AU - Fujiwara, N.

AU - Brunner, R.

AU - Gleskova, H.

AU - Jergel, M.

AU - Mullerova, J.

AU - Kucera, M.

AU - Falcony, C.

AU - Ortega, L.

AU - Rusnak, J.

AU - Mikula, M.

AU - Zahoran, M.

AU - Jurani, R.

AU - Kral, M.

PY - 2004

Y1 - 2004

N2 - This paper deals with the photoluminescence, structural and electricalproperties of chemically passivated a-Si:H basedthinfilms and correspondingthinfilmsolarcells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electricalproperties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solarcells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solarcell multilayer structures was achieved which is of primary practical importance.

AB - This paper deals with the photoluminescence, structural and electricalproperties of chemically passivated a-Si:H basedthinfilms and correspondingthinfilmsolarcells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electricalproperties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solarcells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solarcell multilayer structures was achieved which is of primary practical importance.

KW - amorphous silicon

KW - solar cells

KW - thin films

KW - photoluminescence

U2 - 10.1016/j.apsusc.2004.05.107

DO - 10.1016/j.apsusc.2004.05.107

M3 - Article

VL - 235

SP - 351

EP - 363

JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 3

ER -