Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun; A.H. Clark; S. Calvez; M.D. Dawson

doi:10.1109/ICIPRM.2005.1517475

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.

Original language	English
Title of host publication	Proceedings of International Conference on Indium Phosphide and Related Materials, 2005
Publisher	IEEE
Pages	267-268
Number of pages	2
ISBN (Print)	0-7803-8891-7
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517475
Publication status	Published - 2005

Keywords

III-V semiconductors
infrared spectra
gallium arsenide
indium compounds
photoluminescence

Access to Document

10.1109/ICIPRM.2005.1517475

Cite this

@inproceedings{e85a734b0284497d88a12c0dbe26e3a4,

title = "Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications",

abstract = "We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.",

keywords = "III-V semiconductors, infrared spectra , gallium arsenide , indium compounds, photoluminescence",

author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson",

year = "2005",

doi = "10.1109/ICIPRM.2005.1517475",

language = "English",

isbn = "0-7803-8891-7 ",

pages = "267--268",

booktitle = "Proceedings of International Conference on Indium Phosphide and Related Materials, 2005",

publisher = "IEEE",

}

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.

Proceedings of International Conference on Indium Phosphide and Related Materials, 2005. IEEE, 2005. p. 267-268.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

PY - 2005

Y1 - 2005

N2 - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.

AB - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.

KW - III-V semiconductors

KW - infrared spectra

KW - gallium arsenide

KW - indium compounds

KW - photoluminescence

U2 - 10.1109/ICIPRM.2005.1517475

DO - 10.1109/ICIPRM.2005.1517475

M3 - Conference contribution book

SN - 0-7803-8891-7

SP - 267

EP - 268

BT - Proceedings of International Conference on Indium Phosphide and Related Materials, 2005

PB - IEEE

ER -