Abstract
| Language | English |
|---|---|
| Title of host publication | Proceedings of International Conference on Indium Phosphide and Related Materials, 2005 |
| Publisher | IEEE |
| Pages | 267-268 |
| Number of pages | 2 |
| ISBN (Print) | 0-7803-8891-7 |
| DOIs | |
| Publication status | Published - 2005 |
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Keywords
- III-V semiconductors
- infrared spectra
- gallium arsenide
- indium compounds
- photoluminescence
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Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.
Proceedings of International Conference on Indium Phosphide and Related Materials, 2005. IEEE, 2005. p. 267-268.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book
TY - GEN
T1 - Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications
AU - Sun, H.D.
AU - Clark, A.H.
AU - Calvez, S.
AU - Dawson, M.D.
PY - 2005
Y1 - 2005
N2 - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.
AB - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.
KW - III-V semiconductors
KW - infrared spectra
KW - gallium arsenide
KW - indium compounds
KW - photoluminescence
U2 - 10.1109/ICIPRM.2005.1517475
DO - 10.1109/ICIPRM.2005.1517475
M3 - Conference contribution book
SN - 0-7803-8891-7
SP - 267
EP - 268
BT - Proceedings of International Conference on Indium Phosphide and Related Materials, 2005
PB - IEEE
ER -