Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.
Original languageEnglish
Title of host publicationProceedings of International Conference on Indium Phosphide and Related Materials, 2005
PublisherIEEE
Pages267-268
Number of pages2
ISBN (Print)0-7803-8891-7
DOIs
Publication statusPublished - 2005

    Fingerprint

Keywords

  • III-V semiconductors
  • infrared spectra
  • gallium arsenide
  • indium compounds
  • photoluminescence

Cite this

Sun, H. D., Clark, A. H., Calvez, S., & Dawson, M. D. (2005). Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. In Proceedings of International Conference on Indium Phosphide and Related Materials, 2005 (pp. 267-268). IEEE. https://doi.org/10.1109/ICIPRM.2005.1517475