Abstract
We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.
Original language | English |
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Title of host publication | Proceedings of International Conference on Indium Phosphide and Related Materials, 2005 |
Publisher | IEEE |
Pages | 267-268 |
Number of pages | 2 |
ISBN (Print) | 0-7803-8891-7 |
DOIs | |
Publication status | Published - 2005 |
Keywords
- III-V semiconductors
- infrared spectra
- gallium arsenide
- indium compounds
- photoluminescence