Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun; A.H. Clark; S. Calvez; M.D. Dawson; D.K. Shih; H.H. Lin

doi:10.1109/ICIPRM.2005.1517475

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, D.K. Shih, H.H. Lin

Research output: Contribution to conference › Paper

1 Citation (Scopus)

Abstract

We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

Original language	English
Number of pages	2
DOIs	https://doi.org/10.1109/ICIPRM.2005.1517475
Publication status	Published - May 2005
Event	International Conference on Indium Phosphide and Related Materials - Glasgow, United Kingdom Duration: 8 May 2005 → 12 May 2005

Conference

Conference	International Conference on Indium Phosphide and Related Materials
Country/Territory	United Kingdom
City	Glasgow
Period	8/05/05 → 12/05/05

Keywords

photoluminescence properties
dilute nitride
InNAs/InGaAs/InP
multi-quantum wells
mid-infrared applications

Access to Document

10.1109/ICIPRM.2005.1517475

Cite this

@conference{77f874c59aaf436ba86afac078d90ec4,

title = "Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications",

abstract = "We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects",

keywords = "photoluminescence properties , dilute nitride, InNAs/InGaAs/InP , multi-quantum wells, mid-infrared applications ",

author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson and D.K. Shih and H.H. Lin",

year = "2005",

month = may,

doi = "10.1109/ICIPRM.2005.1517475",

language = "English",

note = "International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

}

TY - CONF

T1 - Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Shih, D.K.

AU - Lin, H.H.

PY - 2005/5

Y1 - 2005/5

N2 - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

AB - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

KW - photoluminescence properties

KW - dilute nitride

KW - InNAs/InGaAs/InP

KW - multi-quantum wells

KW - mid-infrared applications

U2 - 10.1109/ICIPRM.2005.1517475

DO - 10.1109/ICIPRM.2005.1517475

M3 - Paper

T2 - International Conference on Indium Phosphide and Related Materials

Y2 - 8 May 2005 through 12 May 2005

ER -

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this