Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, D.K. Shih, H.H. Lin

Research output: Contribution to conferencePaper


We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects
Original languageEnglish
Number of pages2
Publication statusPublished - May 2005
EventInternational Conference on Indium Phosphide and Related Materials - Glasgow, United Kingdom
Duration: 8 May 200512 May 2005


ConferenceInternational Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom


  • photoluminescence properties
  • dilute nitride
  • InNAs/InGaAs/InP
  • multi-quantum wells
  • mid-infrared applications

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