Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, D.K. Shih, H.H. Lin

Research output: Contribution to conferencePaper

Abstract

We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

Conference

ConferenceInternational Conference on Indium Phosphide and Related Materials
CountryUnited Kingdom
CityGlasgow
Period8/05/0512/05/05

Fingerprint

nitrides
quantum wells
photoluminescence
optical properties
matrices
wavelengths

Keywords

  • photoluminescence properties
  • dilute nitride
  • InNAs/InGaAs/InP
  • multi-quantum wells
  • mid-infrared applications

Cite this

Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Shih, D. K., & Lin, H. H. (2005). Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom. https://doi.org/10.1109/ICIPRM.2005.1517475
Sun, H.D. ; Clark, A.H. ; Calvez, S. ; Dawson, M.D. ; Shih, D.K. ; Lin, H.H. / Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom.2 p.
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abstract = "We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects",
keywords = "photoluminescence properties , dilute nitride, InNAs/InGaAs/InP , multi-quantum wells, mid-infrared applications",
author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson and D.K. Shih and H.H. Lin",
year = "2005",
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doi = "10.1109/ICIPRM.2005.1517475",
language = "English",
note = "International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",

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Sun, HD, Clark, AH, Calvez, S, Dawson, MD, Shih, DK & Lin, HH 2005, 'Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications' Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom, 8/05/05 - 12/05/05, . https://doi.org/10.1109/ICIPRM.2005.1517475

Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; Lin, H.H.

2005. Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Shih, D.K.

AU - Lin, H.H.

PY - 2005/5

Y1 - 2005/5

N2 - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

AB - We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects

KW - photoluminescence properties

KW - dilute nitride

KW - InNAs/InGaAs/InP

KW - multi-quantum wells

KW - mid-infrared applications

U2 - 10.1109/ICIPRM.2005.1517475

DO - 10.1109/ICIPRM.2005.1517475

M3 - Paper

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Sun HD, Clark AH, Calvez S, Dawson MD, Shih DK, Lin HH. Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications. 2005. Paper presented at International Conference on Indium Phosphide and Related Materials, Glasgow, United Kingdom. https://doi.org/10.1109/ICIPRM.2005.1517475