Photoluminescence properties of a-Si:H based thin films and corresponding solar cells

E. Pincik, H. Kobayashi, H. Gleskova, M. Kucera, L. Ortega, M. Jergel, C. Falcony, R. Brunner, T. Shimizu, V. Nadazdy, M. Zeman, M. Mikula, M. Kumeda, R. A. C. M. M. van Swaaij

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Direct surface exposure, as it occurs e.g. in rf plasma equipments, introduces damage due to the charged particle bombardment. The paper deals with photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and correspondingsolarcell structures. The cyanide treatment improves the electrical characteristics of MOS structures as well as solarcells. X-ray diffraction at grazing incidence and reflectance spectroscopy complete the study. The photoluminescence measurements were performed at liquid helium temperatures at 6 K using an Ar laser and lock-in signal recording device containing the PbS and Ge photodetectors. Photoluminescence bands were observed as broad luminescent peaks between 1.05–1.7 eV. Two new peaks were detected at 1.38 and 1.42 eV. The evolution of the band at ∼1.2 eV related to microcrystalline silicon is investigated. The fitting and simulation of photoluminiscence spectra are presented. The surface luminescent properties of a-Si:H based structures (double layers, single thinfilmsolarcells) before and after the passivation are compared with those of very thin oxide layers and chemically treated surfaces.
Original languageEnglish
Pages (from-to)344-351
Number of pages8
JournalThin Solid Films
Volume433
Issue number1-2
DOIs
Publication statusPublished - 2003
Event12th International Conference on Thin Films - Bratislava, Slovakia
Duration: 15 Sep 200220 Sep 2002

Fingerprint

Solar cells
Photoluminescence
solar cells
photoluminescence
Thin films
thin films
Oxides
Microcrystalline silicon
Helium
oxides
Cyanides
cyanides
Charged particles
Photodetectors
Amorphous silicon
grazing incidence
Passivation
liquid helium
passivity
amorphous silicon

Keywords

  • photoluminescence
  • solar cells

Cite this

Pincik, E., Kobayashi, H., Gleskova, H., Kucera, M., Ortega, L., Jergel, M., ... van Swaaij, R. A. C. M. M. (2003). Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. Thin Solid Films, 433(1-2), 344-351. https://doi.org/10.1016/S0040-6090(03)00391-2
Pincik, E. ; Kobayashi, H. ; Gleskova, H. ; Kucera, M. ; Ortega, L. ; Jergel, M. ; Falcony, C. ; Brunner, R. ; Shimizu, T. ; Nadazdy, V. ; Zeman, M. ; Mikula, M. ; Kumeda, M. ; van Swaaij, R. A. C. M. M. / Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. In: Thin Solid Films. 2003 ; Vol. 433, No. 1-2. pp. 344-351.
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abstract = "Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Direct surface exposure, as it occurs e.g. in rf plasma equipments, introduces damage due to the charged particle bombardment. The paper deals with photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and correspondingsolarcell structures. The cyanide treatment improves the electrical characteristics of MOS structures as well as solarcells. X-ray diffraction at grazing incidence and reflectance spectroscopy complete the study. The photoluminescence measurements were performed at liquid helium temperatures at 6 K using an Ar laser and lock-in signal recording device containing the PbS and Ge photodetectors. Photoluminescence bands were observed as broad luminescent peaks between 1.05–1.7 eV. Two new peaks were detected at 1.38 and 1.42 eV. The evolution of the band at ∼1.2 eV related to microcrystalline silicon is investigated. The fitting and simulation of photoluminiscence spectra are presented. The surface luminescent properties of a-Si:H based structures (double layers, single thinfilmsolarcells) before and after the passivation are compared with those of very thin oxide layers and chemically treated surfaces.",
keywords = "photoluminescence, solar cells",
author = "E. Pincik and H. Kobayashi and H. Gleskova and M. Kucera and L. Ortega and M. Jergel and C. Falcony and R. Brunner and T. Shimizu and V. Nadazdy and M. Zeman and M. Mikula and M. Kumeda and {van Swaaij}, {R. A. C. M. M.}",
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Pincik, E, Kobayashi, H, Gleskova, H, Kucera, M, Ortega, L, Jergel, M, Falcony, C, Brunner, R, Shimizu, T, Nadazdy, V, Zeman, M, Mikula, M, Kumeda, M & van Swaaij, RACMM 2003, 'Photoluminescence properties of a-Si:H based thin films and corresponding solar cells', Thin Solid Films, vol. 433, no. 1-2, pp. 344-351. https://doi.org/10.1016/S0040-6090(03)00391-2

Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. / Pincik, E. ; Kobayashi, H.; Gleskova, H.; Kucera, M. ; Ortega, L. ; Jergel, M. ; Falcony, C.; Brunner, R.; Shimizu, T.; Nadazdy, V.; Zeman, M.; Mikula, M.; Kumeda, M.; van Swaaij, R. A. C. M. M.

In: Thin Solid Films, Vol. 433, No. 1-2, 2003, p. 344-351.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence properties of a-Si:H based thin films and corresponding solar cells

AU - Pincik, E.

AU - Kobayashi, H.

AU - Gleskova, H.

AU - Kucera, M.

AU - Ortega, L.

AU - Jergel, M.

AU - Falcony, C.

AU - Brunner, R.

AU - Shimizu, T.

AU - Nadazdy, V.

AU - Zeman, M.

AU - Mikula, M.

AU - Kumeda, M.

AU - van Swaaij, R. A. C. M. M.

PY - 2003

Y1 - 2003

N2 - Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Direct surface exposure, as it occurs e.g. in rf plasma equipments, introduces damage due to the charged particle bombardment. The paper deals with photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and correspondingsolarcell structures. The cyanide treatment improves the electrical characteristics of MOS structures as well as solarcells. X-ray diffraction at grazing incidence and reflectance spectroscopy complete the study. The photoluminescence measurements were performed at liquid helium temperatures at 6 K using an Ar laser and lock-in signal recording device containing the PbS and Ge photodetectors. Photoluminescence bands were observed as broad luminescent peaks between 1.05–1.7 eV. Two new peaks were detected at 1.38 and 1.42 eV. The evolution of the band at ∼1.2 eV related to microcrystalline silicon is investigated. The fitting and simulation of photoluminiscence spectra are presented. The surface luminescent properties of a-Si:H based structures (double layers, single thinfilmsolarcells) before and after the passivation are compared with those of very thin oxide layers and chemically treated surfaces.

AB - Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Direct surface exposure, as it occurs e.g. in rf plasma equipments, introduces damage due to the charged particle bombardment. The paper deals with photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and correspondingsolarcell structures. The cyanide treatment improves the electrical characteristics of MOS structures as well as solarcells. X-ray diffraction at grazing incidence and reflectance spectroscopy complete the study. The photoluminescence measurements were performed at liquid helium temperatures at 6 K using an Ar laser and lock-in signal recording device containing the PbS and Ge photodetectors. Photoluminescence bands were observed as broad luminescent peaks between 1.05–1.7 eV. Two new peaks were detected at 1.38 and 1.42 eV. The evolution of the band at ∼1.2 eV related to microcrystalline silicon is investigated. The fitting and simulation of photoluminiscence spectra are presented. The surface luminescent properties of a-Si:H based structures (double layers, single thinfilmsolarcells) before and after the passivation are compared with those of very thin oxide layers and chemically treated surfaces.

KW - photoluminescence

KW - solar cells

U2 - 10.1016/S0040-6090(03)00391-2

DO - 10.1016/S0040-6090(03)00391-2

M3 - Article

VL - 433

SP - 344

EP - 351

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -