Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

L.-T. Tan, R.W. Martin, K.P. O'Donnell, I.M. Watson, Z.H. Wu, F.A. Ponce

Research output: Contribution to journalArticle

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Abstract

Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the PL
LanguageEnglish
Article number031907
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 25 Jan 2008

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sapphire
quantum wells
photoluminescence
excitation
screening
buffers
luminescence
electric fields
spectroscopy
energy

Keywords

  • single quantum wells
  • photoluminescence
  • aluminium compounds
  • gallium compounds

Cite this

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title = "Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates",
abstract = "Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the PL",
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Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates. / Tan, L.-T.; Martin, R.W.; O'Donnell, K.P.; Watson, I.M.; Wu, Z.H.; Ponce, F.A.

In: Applied Physics Letters, Vol. 92, No. 3, 031907, 25.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

AU - Tan, L.-T.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Watson, I.M.

AU - Wu, Z.H.

AU - Ponce, F.A.

PY - 2008/1/25

Y1 - 2008/1/25

N2 - Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the PL

AB - Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the PL

KW - single quantum wells

KW - photoluminescence

KW - aluminium compounds

KW - gallium compounds

U2 - 10.1063/1.2837630

DO - 10.1063/1.2837630

M3 - Article

VL - 92

JO - Applied Physics Letters

T2 - Applied Physics Letters

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