Photoluminescence of localized excitons in pulsed-laser-deposited GaN

M. Cazzanelli, D. Cole, J. F. Donegan, J. G. Lunney, P. G. Middleton, K. P. O'Donnell, C. Vinegoni, L. Pavesi

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29 Citations (Scopus)

Abstract

Continuous-wave photoluminescence (PL) and time-resolved photoluminescence of gallium nitride layers grown by pulsed laser deposition are compared. The temperature dependence of the photoluminescence decay time and the PL-integrated intensity allows a determination of radiative and nonradiative time constants of GaN. We find that luminescence peaks centered at 3.360 and 3.305 eV at low temperature can be attributed to recombination of excitons localized at extended defects. The photoluminescence radiative lifetime at room temperature is on the order of tens of ns.

Original languageEnglish
Pages (from-to)3390-3392
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number23
DOIs
Publication statusPublished - 1 Dec 1998

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    Cazzanelli, M., Cole, D., Donegan, J. F., Lunney, J. G., Middleton, P. G., O'Donnell, K. P., ... Pavesi, L. (1998). Photoluminescence of localized excitons in pulsed-laser-deposited GaN. Applied Physics Letters, 73(23), 3390-3392. https://doi.org/10.1063/1.122776