Photoluminescence of Eu-doped GaN

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Abstract

This talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/ Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.
Original languageEnglish
Pages (from-to)101-109
Number of pages9
JournalMRS Online Proceedings Library
Volume1342
DOIs
Publication statusPublished - 1 Jan 2012

Keywords

  • semiconductor spectroscopy
  • Eu-doped GaN
  • high energy
  • vapour phase epitaxy

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